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    Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Lead Pitch Height Width Resistance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode Lead Length JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Number of Elements Configuration JEDEC-95 Code Case Connection Halogen Free Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Drain to Source Resistance Supplier Device Package Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage FET Feature Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
    IRFR3518TRPBF IRFR3518TRPBF Infineon Technologies $0.00
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    		 download 14 Weeks Surface Mount Tape & Reel (TR) 2004 HEXFET® Not For New Designs 1 (Unlimited) 2 SMD/SMT EAR99 6.7056mm ROHS3 Compliant Lead Free 38A No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.26mm 6.22mm 29MOhm Surface Mount -55°C~175°C TJ 80V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 TO-252AA DRAIN Single 110W 12 ns 4V 110W Tc 30A SWITCHING 37 ns SILICON N-Channel 29m Ω @ 18A, 10V 4V @ 250μA 1710pF @ 25V 56nC @ 10V 25ns 13 ns 20V 80V 80V 4 V 38A Tc 10V ±20V
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    		 download 26 Weeks Surface Mount Tape & Reel (TR) 2009 OptiMOS™ no Active 1 (Unlimited) 8 EAR99 ROHS3 Compliant Contains Lead 8 8-PowerTDFN not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) DUAL FLAT NOT SPECIFIED NOT SPECIFIED 8 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 125W 31 ns 30V 2.5W Ta 125W Tc 28A SWITCHING 0.002Ohm 42 ns SILICON N-Channel 1.6m Ω @ 30A, 10V 2V @ 250μA 13000pF @ 15V 173nC @ 10V 16ns 16V 28A Ta 100A Tc 400A 340 mJ 4.5V 10V ±20V
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2006 HEXFET® Active 1 (Unlimited) 3 EAR99 4.826mm ROHS3 Compliant Lead Free 18A No 5 DirectFET™ Isometric ST No SVHC 506μm 3.95mm Surface Mount -40°C~150°C TJ 20V MOSFET (Metal Oxide) ENHANCEMENT MODE BOTTOM R-XBCC-N3 1 SINGLE WITH BUILT-IN DIODE DRAIN 42W 14 ns 2.45V 2.2W Ta 42W Tc 15A SWITCHING 16 ns SILICON N-Channel 4.5m Ω @ 18A, 10V 2.45V @ 250μA 2420pF @ 10V 27nC @ 4.5V 19ns 6.2 ns 20V 20V 18A Ta 81A Tc 28 mJ 4.5V 10V ±20V
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2006 HEXFET® Active 1 (Unlimited) 8 EAR99 4.9784mm ROHS3 Compliant Lead Free Tin No 8 8-SOIC (0.154, 3.90mm Width) Unknown 1.4986mm 3.9878mm 18MOhm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL GULL WING FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE 2.5W 13 ns 2.5W Ta 8.3A SWITCHING 26 ns SILICON N-Channel 18m Ω @ 8.3A, 10V 4.9V @ 100μA 1640pF @ 25V 39nC @ 10V 6.6ns 6 ns 20V 100V 8.3A Ta 66A 10V ±20V
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    		 download Through Hole Tube 2008 CoolMOS™ yes Not For New Designs 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free 3 TO-220-3 Full Pack Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB ISOLATED Halogen Free 28W 10 ns 650V 28W Tc 7.3A SWITCHING 0.6Ohm 64 ns SILICON N-Channel 600m Ω @ 2.1A, 10V 3.5V @ 210μA 440pF @ 100V 23nC @ 10V 8ns 11 ns 20V 7.3A Tc 10V ±20V
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    		 download 12 Weeks Through Hole Tube 2006 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 6.6mm ROHS3 Compliant Lead Free No 3 TO-251-3 Short Leads, IPak, TO-251AA No SVHC 6.1mm 2.3mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier 260 30 FET General Purpose Power 1 DRAIN Single 140W 24 ns 2.5V 140W Tc 42A SWITCHING 33 ns SILICON N-Channel 14m Ω @ 38A, 10V 2.5V @ 100μA 3980pF @ 25V 48nC @ 4.5V 110ns 48 ns 16V 100V 100V 2.5 V 42A Tc 250A 4.5V 10V ±16V
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    		 download 13 Weeks Through Hole Tube 2013 OptiMOS™ yes Active 1 (Unlimited) 3 ROHS3 Compliant Contains Lead TO-220-3 Through Hole 6.000006g -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) NOT SPECIFIED NOT SPECIFIED R-PSFM-T3 1 1 TO-220AB DRAIN Halogen Free Single 13 ns 100V 100W Tc 73A SWITCHING 0.0083Ohm 21 ns SILICON N-Channel 8.3m Ω @ 73A, 10V 3.8V @ 49μA 2730pF @ 50V 37nC @ 10V 5ns 5 ns 20V 100V 73A Tc 292A 42 mJ 6V 10V ±20V
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    		 download 13 Weeks Through Hole Tube 2008 OptiMOS™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free No TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE 3 R-PSFM-T3 1 SINGLE WITH BUILT-IN DIODE TO-220AB Halogen Free 125W 18 ns 100V 125W Tc 80A SWITCHING 0.0086Ohm 31 ns SILICON N-Channel 8.6m Ω @ 73A, 10V 3.5V @ 75μA 3980pF @ 50V 55nC @ 10V 42ns 8 ns 20V 80A Tc 320A 6V 10V ±20V
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    		 download 18 Weeks Through Hole Tube 2008 CoolMOS™ P6 Active 1 (Unlimited) 150°C -55°C ROHS3 Compliant Lead Free 3 TO-220-3 Full Pack Through Hole 6.000006g -55°C~150°C TJ MOSFET (Metal Oxide) 1 1 Halogen Free 32W 12 ns 600V 252mOhm PG-TO220-FP 32W Tc 13.8A 36 ns N-Channel 280mOhm @ 5.2A, 10V 4.5V @ 430μA 1190pF @ 100V 25.5nC @ 10V 6ns 6 ns 20V 13.8A Tc 600V 1.19nF 10V ±20V 280 mΩ
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    		 download 14 Weeks Through Hole Tube 2000 HEXFET® Not For New Designs 1 (Unlimited) 3 Through Hole EAR99 ROHS3 Compliant Lead Free 59A No 3 TO-220-3 No SVHC 8.763mm 4.69mm 25mOhm Through Hole -55°C~175°C TJ 100V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE 250 30 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE TO-220AB DRAIN 200W 16 ns 5.5V 3.8W Ta 200W Tc 59A SWITCHING 20 ns SILICON N-Channel 25m Ω @ 35.4A, 10V 5.5V @ 250μA 2450pF @ 25V 114nC @ 10V 90ns 12 ns 30V 100V 100V 5.5 V 59A Tc 10V ±30V
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    		 download 13 Weeks Through Hole Tube 2008 OptiMOS™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free No 3 TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) 3 1 TO-220AB Halogen Free Single 188W 35 ns 60V 188W Tc 120A SWITCHING 62 ns SILICON N-Channel 3.2m Ω @ 100A, 10V 4V @ 118μA 13000pF @ 30V 165nC @ 10V 120ns 20 ns 20V 60V 120A Tc 480A 10V ±20V
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    		 download 12 Weeks Through Hole Tube 2005 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 10.668mm ROHS3 Compliant Lead Free No 3 AVALANCHE RATED, HIGH RELIABILITY TO-262-3 Long Leads, I2Pak, TO-262AA No SVHC 9.65mm 4.826mm 117mOhm Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier 260 30 1 Other Transistors 1 DRAIN Single 3.1W 13 ns 4V 3.1W Ta 110W Tc -23A SWITCHING 40 ns SILICON P-Channel 117m Ω @ 14A, 10V 4V @ 250μA 1450pF @ 25V 110nC @ 10V 67ns 51 ns 20V -100V 100V 4 V 23A Tc 92A 84 mJ 10V ±20V
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    		 download 13 Weeks Through Hole Tube 2008 OptiMOS™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free 3 TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB Halogen Free 150W 18 ns 80V 150W Tc 80A SWITCHING 0.0057Ohm 38 ns SILICON N-Channel 5.7m Ω @ 80A, 10V 3.5V @ 90μA 4750pF @ 40V 69nC @ 10V 66ns 10 ns 20V 80A Tc 6V 10V ±20V
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    		 download 12 Weeks Through Hole Tube 2013 HEXFET®, StrongIRFET™ Active 1 (Unlimited) 3 EAR99 10.67mm ROHS3 Compliant Lead Free 3 TO-220-3 No SVHC 16.51mm 4.83mm Through Hole 6.000006g -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE NOT SPECIFIED NOT SPECIFIED 1 FET General Purpose Power 1 TO-220AB ISOLATED Single 294W 20 ns 3.7V 294W Tc 195A SWITCHING 0.0024Ohm 60V 118 ns SILICON N-Channel 2.4m Ω @ 100A, 10V 3.7V @ 250μA 10034pF @ 25V 279nC @ 10V 134ns 93 ns 20V 195A Tc 60V 944A 775 mJ 6V 10V ±20V
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    		 download 18 Weeks Tube 2004 CoolMOS™ yes Active 1 (Unlimited) 3 ROHS3 Compliant AVALANCHE RATED, HIGH VOLTAGE TO-220-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSFM-T3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB 104W Tc 0.65Ohm 800V SILICON N-Channel 650m Ω @ 5.1A, 10V 3.9V @ 470μA 1100pF @ 100V 60nC @ 10V 8A 8A Tc 800V 24A 340 mJ 10V ±20V
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    		 download 14 Weeks Through Hole Tube 2000 HEXFET® Not For New Designs 1 (Unlimited) 3 Through Hole EAR99 10.54mm ROHS3 Compliant Contains Lead, Lead Free Tin 24A No 3 TO-220-3 No SVHC 4.69mm 4.699mm 100MOhm Through Hole -55°C~175°C TJ 200V MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 170W 14 ns 5.5V 3.8W Ta 170W Tc 24A SWITCHING 26 ns SILICON N-Channel 100m Ω @ 14A, 10V 5.5V @ 250μA 1960pF @ 25V 86nC @ 10V 32ns 16 ns 30V 200V 200V 5.5 V 24A Tc 96A 250 mJ 10V ±30V
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    		 download 14 Weeks Through Hole Tube 2003 HEXFET® Not For New Designs 1 (Unlimited) 3 EAR99 10.6426mm ROHS3 Compliant Lead Free Tin 250A No 3 AVALANCHE RATED TO-220-3 No SVHC 9.017mm 4.82mm 3mOhm Through Hole -55°C~175°C TJ 30V MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 200W 16 ns 2.5V 330W Tc 260A SWITCHING 40 ns SILICON N-Channel 3m Ω @ 38A, 10V 2.5V @ 250μA 5890pF @ 15V 110nC @ 4.5V 160ns 57 ns 20V 30V 30V 2.5 V 75A 260A Tc 4.5V 10V ±20V
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    		 download Through Hole Tube 2010 CoolMOS™ yes Not For New Designs 1 (Unlimited) 3 ROHS3 Compliant Lead Free 3 TO-220-3 Full Pack Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB ISOLATED Halogen Free 11 ns 650V 32W Tc 13.8A SWITCHING 0.28Ohm 76 ns SILICON N-Channel 280m Ω @ 4.4A, 10V 3.5V @ 440μA 950pF @ 100V 45nC @ 10V 9ns 20V 13.8A Tc 290 mJ 10V ±20V
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    		 download 18 Weeks Through Hole Tube 2008 CoolMOS™ P6 Active 1 (Unlimited) 3 ROHS3 Compliant Lead Free 3 TO-220-3 Full Pack Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 1 SINGLE WITH BUILT-IN DIODE TO-220AB ISOLATED Halogen Free 15 ns 600V 34W Tc 20.2A SWITCHING 0.19Ohm 45 ns SILICON N-Channel 190m Ω @ 7.6A, 10V 4.5V @ 630μ 1750pF @ 100V 37nC @ 10V 8ns 7 ns 20V 20.2A Tc 57A 419 mJ 10V ±20V
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    		 download 13 Weeks Through Hole Tube 2009 HEXFET® Not For New Designs 1 (Unlimited) 3 EAR99 10.668mm ROHS3 Compliant Lead Free No 3 TO-220-3 16.51mm 4.826mm 3MOhm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 300W 19 ns 300W Tc 210A SWITCHING 55 ns SILICON N-Channel 3m Ω @ 75A, 10V 4V @ 150μA 6540pF @ 50V 170nC @ 10V 82ns 83 ns 20V 60V 120A 120A Tc 840A 170 mJ 10V ±20V
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    		 download 12 Weeks Through Hole Tube 2006 Active 1 (Unlimited) 3 EAR99 10.668mm ROHS3 Compliant Lead Free 3 TO-220-3 No SVHC 9.02mm 4.826mm 39MOhm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE NOT SPECIFIED NOT SPECIFIED FET General Purpose Power Not Qualified 1 TO-220AB DRAIN Single 144W 8.6 ns 3V 144W Tc 120 ns 35A AMPLIFIER 17.1 ns SILICON N-Channel 39m Ω @ 21A, 10V 5V @ 100μA 1750pF @ 50V 40nC @ 10V 23.1ns 13.2 ns 20V 150V 3 V 35A Tc 10V ±20V
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    		 download 18 Weeks Through Hole Tube 2013 CoolMOS™ yes Active Not Applicable 3 ROHS3 Compliant TO-220-3 Full Pack Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED R-PSFM-T3 1 SINGLE WITH BUILT-IN DIODE TO-220AB ISOLATED 29W Tc 11A SWITCHING 0.45Ohm 800V SILICON N-Channel 450m Ω @ 4.5A, 10V 3.5V @ 220μA 770pF @ 500V 24nC @ 10V Super Junction 11A Tc 800V 29A 29 mJ 10V ±20V
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    		 download 12 Weeks Through Hole Tube 2001 HEXFET®, StrongIRFET™ Active 1 (Unlimited) 3 EAR99 10.67mm ROHS3 Compliant Lead Free No 3 TO-220-3 No SVHC 16.51mm 4.83mm 2.5MOhm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 208W 24 ns 3V 143W Tc 24 ns 120A SWITCHING 115 ns SILICON N-Channel 2.5m Ω @ 100A, 10V 3.9V @ 100μA 4730pF @ 25V 135nC @ 10V 68ns 20V 40V 3 V 120A Tc 772A 6V 10V ±20V
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    		 download 12 Weeks Through Hole Bulk 2006 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 15.875mm ROHS3 Compliant Lead Free Tin 57A No 3 ULTRA LOW ON-RESISTANCE TO-247-3 No SVHC 20.3mm 5.3mm 33MOhm Through Hole -40°C~175°C TJ 250V MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-247AC DRAIN Single 120mW 5V 360W Tc 290 ns 57A SWITCHING SILICON N-Channel 33m Ω @ 35A, 10V 5V @ 250μA 5860pF @ 25V 150nC @ 10V 30V 250V 250V 5 V 57A Tc 10V ±30V
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    		 download 12 Weeks Through Hole Tube 2002 HEXFET® Active 1 (Unlimited) 3 EAR99 10.9982mm ROHS3 Compliant Lead Free 174A No 3 HIGH RELIABILITY TO-273AA 15mm 5mm 5MOhm Through Hole -40°C~175°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 DRAIN Single 330W 13 ns 330W Tc 174A SWITCHING 130 ns SILICON N-Channel 5m Ω @ 101A, 10V 4V @ 250μA 5480pF @ 25V 260nC @ 10V 190ns 110 ns 20V 55V 174A Tc 680A 560 mJ 10V ±20V
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    		 download 14 Weeks Through Hole Tube 1998 HEXFET® Not For New Designs 1 (Unlimited) 3 Through Hole EAR99 10.5156mm ROHS3 Compliant Contains Lead, Lead Free Tin 31A No 3 TO-220-3 No SVHC 8.763mm 4.69mm 82mOhm Through Hole -55°C~175°C TJ 200V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 250 30 FET General Purpose Power 1 TO-220AB DRAIN Single 200W 16 ns 5.5V 3.1W Ta 200W Tc 300 ns 31A SWITCHING 26 ns SILICON N-Channel 82m Ω @ 18A, 10V 5.5V @ 250μA 2370pF @ 25V 107nC @ 10V 38ns 10 ns 30V 200V 200V 5.5 V 31A Tc 420 mJ 10V ±30V
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    		 download 12 Weeks Through Hole Tube 1999 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 6.7056mm ROHS3 Compliant Lead Free -13A No 3 HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE TO-251-3 Short Leads, IPak, TO-251AA No SVHC 2.28mm 6.22mm 2.3876mm Through Hole -55°C~150°C TJ -100V MOSFET (Metal Oxide) ENHANCEMENT MODE 9.65mm e3 Matte Tin (Sn) - with Nickel (Ni) barrier 260 30 Other Transistors 1 DRAIN Single 66W 15 ns -4V 66W Tc -13A SWITCHING 0.205Ohm 45 ns SILICON P-Channel 205m Ω @ 7.8A, 10V 4V @ 250μA 760pF @ 25V 58nC @ 10V 58ns 46 ns 20V -100V -100V -4 V 13A Tc 100V 52A 10V ±20V
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2009 HEXFET® Active 1 (Unlimited) 3 EAR99 6.35mm ROHS3 Compliant No 5 DirectFET™ Isometric MX No SVHC 508μm 5.0546mm Surface Mount -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) BOTTOM R-XBCC-N3 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 89W 21 ns 1.8V 2.8W Ta 89W Tc 32A SWITCHING 24 ns SILICON N-Channel 1.7m Ω @ 32A, 10V 2.35V @ 100μA 6190pF @ 15V 74nC @ 4.5V 31ns 16 ns 20V 30V 32A Ta 180A Tc 260A 4.5V 10V ±20V
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    		 download 18 Weeks Surface Mount Tape & Reel (TR) 2013 OptiMOS™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Contains Lead Tin 8 8-PowerTDFN not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 DUAL NO LEAD NOT SPECIFIED NOT SPECIFIED S-PDSO-N3 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 25V 2.1W Ta 69W Tc 40A SWITCHING 0.0021Ohm SILICON N-Channel 1.45m Ω @ 20A, 10V 2V @ 250μA 2300pF @ 12V 33nC @ 10V 3ns 16V Schottky Diode (Body) 31A 31A Ta 40A Tc 160A 4.5V 10V ±16V
    SPA11N80C3XKSA2 SPA11N80C3XKSA2 Infineon Technologies $0.00
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    		 download 18 Weeks Through Hole Tube 2005 CoolMOS™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant AVALANCHE RATED TO-220-3 Isolated Tab Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NOT SPECIFIED NOT SPECIFIED R-PSFM-T3 1 SINGLE WITH BUILT-IN DIODE TO-220AB 34W Tc 11A SWITCHING 0.45Ohm 800V SILICON N-Channel 450m Ω @ 7.1A, 10V 3.9V @ 680μA 1600pF @ 100V 85nC @ 10V 11A Tc 800V 33A 470 mJ 10V ±20V