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Infineon Technologies(12661)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Lead Pitch | Frequency | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | Current | Type | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | JESD-30 Code | Number of Channels | Subcategory | Qualification Status | Max Power Dissipation | Reference Standard | Voltage | Number of Elements | Configuration | JEDEC-95 Code | Polarity | Case Connection | Halogen Free | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Max Dual Supply Voltage | Drain to Source Resistance | Max Breakdown Voltage | Supplier Device Package | Power Dissipation-Max | Recovery Time | Max Collector Current | Collector Emitter Breakdown Voltage | Collector Emitter Voltage (VCEO) | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Drain-source On Resistance-Max | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Dual Supply Voltage | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Transistor Type | Transition Frequency | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Current - Collector Cutoff (Max) | Collector Emitter Saturation Voltage | Collector Base Voltage (VCBO) | Emitter Base Voltage (VEBO) | hFE Min | DC Current Gain (hFE) (Min) @ Ic, Vce | Vce Saturation (Max) @ Ib, Ic |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| V6114100NSHPSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
Obsolete | Not Applicable | Mount | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BC846PNH6327XTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 4 Weeks | Surface Mount | Tape & Reel (TR) | 2007 | Last Time Buy | 1 (Unlimited) | 6 | EAR99 | 2mm | ROHS3 Compliant | Lead Free | Tin | 6 | 6-VSSOP, SC-88, SOT-363 | 250MHz | 800μm | 1.25mm | Surface Mount | 150°C TJ | e3 | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | BC846PN | 250mW | AEC-Q101 | 2 | NPN, PNP | Halogen Free | 250mW | 65V | 100mA | 65V | 650mV | AMPLIFIER | SILICON | NPN, PNP | 250MHz | 15nA ICBO | 650mV | 80V | 6V | 200 | 200 @ 2mA 5V | 650mV @ 5mA, 100mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BC817UPNE6327HTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 4 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | Last Time Buy | 1 (Unlimited) | 6 | EAR99 | 2.9mm | ROHS3 Compliant | Lead Free | 500mA | No | 6 | SC-74, SOT-457 | 170MHz | 1mm | 1.6mm | Surface Mount | 150°C TJ | 45V | e3 | Tin (Sn) | DUAL | GULL WING | BC817 | 330mW | 2 | NPN, PNP | Not Halogen Free | 330mW | 45V | 500mA | 45V | 700mV | AMPLIFIER | SILICON | NPN, PNP | 170MHz | 100nA ICBO | 700mV | 50V | 5V | 160 @ 100mA 1V | 700mV @ 50mA, 500mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BC857SH6327XTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 4 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | yes | Last Time Buy | 1 (Unlimited) | 6 | EAR99 | 2mm | ROHS3 Compliant | Lead Free | No | 6 | 6-VSSOP, SC-88, SOT-363 | 250MHz | 800μm | 1.25mm | Surface Mount | 150°C TJ | 1A | e3 | Tin (Sn) | GULL WING | BC857 | 6 | 250mW | AEC-Q101 | 65V | 2 | PNP | Halogen Free | 250mW | 45V | 100mA | 45V | 650mV | AMPLIFIER | SILICON | 2 PNP (Dual) | 250MHz | 15nA ICBO | 650mV | 50V | 5V | 200 | 200 @ 2mA 5V | 650mV @ 5mA, 100mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL6342TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 15 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | HEXFET® | Not For New Designs | 1 (Unlimited) | 8 | EAR99 | ROHS3 Compliant | Lead Free | No | 8 | HIGH RELIABILITY | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 14.6MOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | 2.5W | 6 ns | 1.1V | 2.5W Ta | 9.9A | SWITCHING | 33 ns | SILICON | N-Channel | 14.6m Ω @ 9.9A, 4.5V | 1.1V @ 10μA | 1025pF @ 25V | 11nC @ 4.5V | 12ns | 14 ns | 12V | 30V | 1.1 V | 9.9A Ta | 79A | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLL014NTRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 1999 | HEXFET® | Active | 1 (Unlimited) | 4 | EAR99 | 6.6802mm | ROHS3 Compliant | Lead Free | Tin | 2A | No | 3 | AVALANCHE RATED, ULTRA LOW RESISTANCE | TO-261-4, TO-261AA | No SVHC | 1.4478mm | 3.7mm | 200mOhm | Surface Mount | -55°C~150°C TJ | 55V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | R-PDSO-G4 | 1 | DRAIN | Single | 2.1W | 5.1 ns | 2V | 1W Ta | 61 ns | 2A | SWITCHING | 14 ns | SILICON | N-Channel | 140m Ω @ 2A, 10V | 2V @ 250μA | 230pF @ 25V | 14nC @ 10V | 4.9ns | 2.9 ns | 16V | 55V | 55V | 2 V | 2A | 2A Ta | 4V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFB3306PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2011 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | 10.668mm | ROHS3 Compliant | Lead Free | 160A | No | 3 | TO-220-3 | No SVHC | 19.8mm | 4.826mm | 4.2MOhm | Through Hole | -55°C~175°C TJ | 60V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 1 | FET General Purpose Power | 1 | TO-220AB | DRAIN | Single | 230W | 15 ns | 4V | 230W Tc | 31 ns | 160A | 175°C | SWITCHING | 40 ns | SILICON | N-Channel | 4.2m Ω @ 75A, 10V | 4V @ 150μA | 4520pF @ 50V | 120nC @ 10V | 76ns | 77 ns | 20V | 60V | 120A Tc | 620A | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC010N04LSATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 39 Weeks | Surface Mount | Cut Tape (CT) | 2003 | OptiMOS™ | no | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerTDFN | not_compliant | 1.1mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | R-PDSO-F3 | 1 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 2.5W | 10 ns | 1.2V | 40V | 2.5W Ta 139W Tc | 100A | 150°C | SWITCHING | 46 ns | SILICON | N-Channel | 1m Ω @ 50A, 10V | 2V @ 250μA | 6800pF @ 20V | 95nC @ 10V | 12ns | 9 ns | 20V | 40V | 38A Ta 100A Tc | 400A | 330 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP7537PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2013 | HEXFET®, StrongIRFET™ | Active | 1 (Unlimited) | EAR99 | 15.87mm | ROHS3 Compliant | Lead Free | 3 | TO-247-3 | No SVHC | 20.7mm | 5.31mm | Through Hole | 38.000013g | -55°C~175°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | 1 | Single | 230W | 15 ns | 3.7V | 230W Tc | 172A | 82 ns | N-Channel | 3.3m Ω @ 100A, 10V | 3.7V @ 150μA | 7020pF @ 25V | 210nC @ 10V | 105ns | 84 ns | 20V | 172A Tc | 60V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR6215TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Active | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 6.7056mm | ROHS3 Compliant | Contains Lead, Lead Free | -13A | No | 3 | AVALANCHE RATED | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.52mm | 6.22mm | 295mOhm | Surface Mount | -55°C~175°C TJ | -150V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | 1 | Other Transistors | 1 | TO-252AA | DRAIN | Single | 110W | 14 ns | -4V | 110W Tc | 240 ns | -13A | 175°C | SWITCHING | 53 ns | SILICON | P-Channel | 295m Ω @ 6.6A, 10V | 4V @ 250μA | 860pF @ 25V | 66nC @ 10V | 36ns | 37 ns | 20V | -150V | -150V | -4 V | 13A Tc | 150V | 44A | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| BSC067N06LS3GATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 8 | R-PDSO-F5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 2.5W | 15 ns | 60V | 2.5W Ta 69W Tc | 15A | SWITCHING | 0.0067Ohm | 37 ns | SILICON | N-Channel | 6.7m Ω @ 50A, 10V | 2.2V @ 35μA | 5100pF @ 30V | 67nC @ 10V | 26ns | 7 ns | 20V | 15A Ta 50A Tc | 200A | 47 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC022N04LSATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2012 | OptiMOS™ | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | Tin | 8 | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | BSC022N04 | R-PDSO-F5 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 40V | 2.5W Ta 69W Tc | 100A | SWITCHING | 0.0032Ohm | SILICON | N-Channel | 2.2m Ω @ 50A, 10V | 2V @ 250μA | 2600pF @ 20V | 37nC @ 10V | 6.8ns | 20V | 40V | 25A | 100A Tc | 400A | 70 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSS138NH6327XTSA2 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2002 | SIPMOS® | yes | Active | 1 (Unlimited) | 3 | SMD/SMT | EAR99 | ROHS3 Compliant | Lead Free | No | 3 | LOGIC LEVEL COMPATIBLE | TO-236-3, SC-59, SOT-23-3 | No SVHC | 3.05mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 2A | e3 | Matte Tin (Sn) | DUAL | GULL WING | 3 | 50V | 1 | SINGLE WITH BUILT-IN DIODE | Halogen Free | 360mW | 2.3 ns | 1V | 60V | 360mW Ta | 14.5 ns | 230mA | 6.7 ns | SILICON | N-Channel | 3.5 Ω @ 230mA, 10V | 1.4V @ 26μA | 41pF @ 25V | 1.4nC @ 10V | 3ns | 8.2 ns | 20V | 60V | 1 V | 230mA Ta | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFHM9331TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | HEXFET® | Active | 1 (Unlimited) | 5 | EAR99 | 2.9972mm | ROHS3 Compliant | Lead Free | No | 8 | 8-PowerTDFN | No SVHC | 1mm | 2.9972mm | 14.6MOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | S-PDSO-N5 | 1 | Other Transistors | 1 | DRAIN | Single | 2.8W | 11 ns | -1.8V | 2.8W Ta | -11A | 150°C | SWITCHING | 72 ns | SILICON | P-Channel | 10m Ω @ 11A, 20V | 2.4V @ 25μA | 1543pF @ 25V | 48nC @ 10V | 27ns | 60 ns | 25V | -30V | 24A | 11A Ta 24A Tc | 30V | 90A | 76 mJ | 10V 20V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD30N03S4L09ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | OptiMOS™ | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | AEC-Q101 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 3 ns | 30V | 42W Tc | 30A | 0.009Ohm | 12 ns | SILICON | N-Channel | 9m Ω @ 30A, 10V | 2.2V @ 13μA | 1520pF @ 15V | 20nC @ 10V | 1ns | 5 ns | 16V | 30A Tc | 120A | 28 mJ | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSZ036NE2LSATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | OptiMOS™ | no | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Contains Lead | 8 | LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE | 8-PowerTDFN | No SVHC | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 8 | R-PDSO-N3 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 2.1W | 3.3 ns | 2V | 25V | 2.1W Ta 37W Tc | 16A | SWITCHING | 15 ns | SILICON | N-Channel | 3.6m Ω @ 20A, 10V | 2V @ 250μA | 1200pF @ 12V | 16nC @ 10V | 2.8ns | 2.2 ns | 20V | 16A Ta 40A Tc | 40 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC052N03LSATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | Tin | No | 8 | 8-PowerTDFN | No SVHC | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | FLAT | 8 | R-PDSO-F5 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 2.5W | 2.4 ns | 2V | 30V | 2.5W Ta 28W Tc | 17A | SWITCHING | 0.0072Ohm | 13 ns | SILICON | N-Channel | 5.2m Ω @ 30A, 10V | 2V @ 250μA | 770pF @ 15V | 12nC @ 10V | 3.6ns | 2.4 ns | 20V | 17A Ta 57A Tc | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC030N08NS5ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | OptiMOS™ | yes | Active | 1 (Unlimited) | 5 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerTDFN | 1.1mm | Surface Mount | 506.605978mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | R-PDSO-F5 | 1 | 1 | DRAIN | Halogen Free | Single | 2.5W | 20 ns | 80V | 2.5W Ta 139W Tc | 22A | 150°C | SWITCHING | 0.003Ohm | 43 ns | SILICON | N-Channel | 3m Ω @ 50A, 10V | 3.8V @ 95μA | 5600pF @ 40V | 76nC @ 10V | 12ns | 13 ns | 20V | 80V | 100A Tc | 400A | 250 mJ | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC093N04LSGATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 39 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | Tin | No | 8 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | 8-PowerTDFN | No SVHC | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | FLAT | 8 | R-PDSO-F5 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 35W | 3.6 ns | 40V | 2.5W Ta 35W Tc | 13A | SWITCHING | 0.0093Ohm | 16 ns | SILICON | N-Channel | 9.3m Ω @ 40A, 10V | 2V @ 14μA | 1900pF @ 20V | 24nC @ 10V | 2.4ns | 2.8 ns | 20V | 13A Ta 49A Tc | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSZ097N04LSGATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | Tin | 8 | LOGIC LEVEL COMPATIBLE | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 8 | R-PDSO-N5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 35W | 40V | 2.1W Ta 35W Tc | 12A | SWITCHING | SILICON | N-Channel | 9.7m Ω @ 20A, 10V | 2V @ 14μA | 1900pF @ 20V | 24nC @ 10V | 2.4ns | 20V | 12A Ta 40A Tc | 20 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC028N06NSATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Cut Tape (CT) | 2012 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | Tin | 8 | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 8 | R-PDSO-F5 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 83W | 60V | 2.5W Ta 83W Tc | 100A | SWITCHING | 19 ns | SILICON | N-Channel | 2.8m Ω @ 50A, 10V | 2.8V @ 50μA | 2700pF @ 30V | 37nC @ 10V | 38ns | 8 ns | 20V | 60V | 23A | 23A Ta 100A Tc | 400A | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF3710STRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | HEXFET® | Active | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 10.668mm | ROHS3 Compliant | Contains Lead, Lead Free | 57A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.826mm | 9.65mm | 23MOhm | Surface Mount | -55°C~175°C TJ | 100V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | DRAIN | Single | 200W | 12 ns | 4V | 200W Tc | 220 ns | 57A | SWITCHING | 45 ns | SILICON | N-Channel | 23m Ω @ 28A, 10V | 4V @ 250μA | 3130pF @ 25V | 130nC @ 10V | 58ns | 47 ns | 20V | 100V | 100V | 4 V | 57A Tc | 280 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IPD053N08N3GATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | OptiMOS™ | yes | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | Halogen Free | 150W | 18 ns | 80V | 150W Tc | 90A | SWITCHING | 38 ns | SILICON | N-Channel | 5.3m Ω @ 90A, 10V | 3.5V @ 90μA | 4750pF @ 40V | 69nC @ 10V | 66ns | 10 ns | 20V | 90A Tc | 190 mJ | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFS4620TRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount, Through Hole | Tape & Reel (TR) | 2008 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | 10.668mm | ROHS3 Compliant | Lead Free | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 9.65mm | 4.826mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | DRAIN | Single | 144W | 13.4 ns | 144W Tc | 24A | SWITCHING | 0.0775Ohm | 25.4 ns | SILICON | N-Channel | 77.5m Ω @ 15A, 10V | 5V @ 100μA | 1710pF @ 50V | 38nC @ 10V | 22.4ns | 14.8 ns | 20V | 200V | 24A Tc | 100A | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC047N08NS3GATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 8 | R-PDSO-F5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 125W | 18 ns | 80V | 2.5W Ta 125W Tc | 18A | SWITCHING | 0.0047Ohm | 44 ns | SILICON | N-Channel | 4.7m Ω @ 50A, 10V | 3.5V @ 90μA | 4800pF @ 40V | 69nC @ 10V | 17ns | 11 ns | 20V | 18A Ta 100A Tc | 400A | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD600N25N3GATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | OptiMOS™ | yes | Active | 1 (Unlimited) | 2 | ROHS3 Compliant | Contains Lead | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | Halogen Free | 250V | 136W Tc | 25A | SWITCHING | 0.06Ohm | SILICON | N-Channel | 60m Ω @ 25A, 10V | 4V @ 90μA | 2350pF @ 100V | 29nC @ 10V | 25A Tc | 100A | 210 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB65R310CFDATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | CoolMOS™ | no | Active | 1 (Unlimited) | 2 | ROHS3 Compliant | Contains Lead | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | Halogen Free | 11 ns | 650V | 104.2W Tc | 11.4A | SWITCHING | 45 ns | SILICON | N-Channel | 310m Ω @ 4.4A, 10V | 4.5V @ 400μA | 1100pF @ 100V | 41nC @ 10V | 7.5ns | 7 ns | 20V | 11.4A Tc | 290 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC082N10LSGATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | OptiMOS™ | no | Not For New Designs | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | Tin | 8 | LOGIC LEVEL COMPATIBLE | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 8 | R-PDSO-F5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 156W | 100V | 156W Tc | 100A | SWITCHING | SILICON | N-Channel | 8.2m Ω @ 100A, 10V | 2.4V @ 110μA | 7400pF @ 50V | 104nC @ 10V | 24ns | 20V | 13.8A Ta 100A Tc | 400A | 377 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF3205PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
12 Weeks | Through Hole | Tube | 2001 | HEXFET® | Active | 1 (Unlimited) | 3 | Through Hole | EAR99 | 10.54mm | ROHS3 Compliant | Contains Lead, Lead Free | 110A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | TO-220-3 | No SVHC | 2.54mm | 19.8mm | 4.69mm | 8mOhm | Through Hole | -55°C~175°C TJ | 55V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 1 | FET General Purpose Power | 1 | TO-220AB | DRAIN | Single | 150W | 14 ns | 4V | 200W Tc | 104 ns | 110A | 175°C | SWITCHING | 50 ns | SILICON | N-Channel | 8m Ω @ 62A, 10V | 4V @ 250μA | 3247pF @ 25V | 146nC @ 10V | 101ns | 65 ns | 20V | 55V | 55V | 4 V | 75A | 110A Tc | 264 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| BSC110N15NS5ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Tape & Reel (TR) | 2008 | OptiMOS™ | Active | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 8-PowerTDFN | 1.1mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | 1 | 125W | 10.3 ns | 9mOhm | PG-TDSON-8-7 | 125W Tc | 76A | 150°C | 14.5 ns | N-Channel | 11mOhm @ 38A, 10V | 4.6V @ 91μA | 2770pF @ 75V | 35nC @ 10V | 20V | 150V | 76A Tc | 150V | 8V 10V | ±20V |