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Vishay Semiconductor Diodes Division(13890)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Mounting Type | Technology | HTS Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | JESD-30 Code | Operating Temperature (Max) | Subcategory | Qualification Status | Diode Element Material | Number of Elements | Configuration | Diode Type | Output Current-Max | Application | Number of Phases | JEDEC-95 Code | Non-rep Pk Forward Current-Max | Forward Current | Forward Voltage | Case Connection | Max Surge Current | Element Configuration | Max Reverse Leakage Current | Supplier Device Package | Speed | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Operating Temperature - Junction | Max Reverse Voltage (DC) | Average Rectified Current | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Max Forward Surge Current (Ifsm) | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Reverse Current-Max | Reverse Recovery Time | Reverse Voltage | Recovery Time | Capacitance @ Vr, F |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| VS-50WQ03FNTRHM3 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2016 | Automotive, AEC-Q101 | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | FREE WHEELING DIODE | TO-252-3, DPak (2 Leads + Tab), SC-63 | unknown | Surface Mount | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 150°C | SILICON | 1 | SINGLE | Schottky | GENERAL PURPOSE | 1 | TO-252AA | 130A | CATHODE | Fast Recovery =< 500ns, > 200mA (Io) | 3mA @ 30V | 460mV @ 5A | -40°C~150°C | 30V | 5.5A | 30V | 3000μA | 590pF @ 5V 1MHz | |||||||||||||||||||||||||||||||||||||||
| VIT1080S-E3/4W | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Through Hole | Tube | 2011 | TMBS® | Active | 1 (Unlimited) | 3 | EAR99 | 150°C | -55°C | ROHS3 Compliant | 3 | FREE WHEELING DIODE, LOW POWER LOSS | TO-262-3 Long Leads, I2Pak, TO-262AA | unknown | Through Hole | 8541.10.00.80 | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | Rectifier Diodes | Not Qualified | SILICON | 1 | Schottky | EFFICIENCY | 1 | 10A | CATHODE | 100A | Common Anode | 20μA | Fast Recovery =< 500ns, > 200mA (Io) | 600μA @ 80V | 810mV @ 10A | -55°C~150°C | 80V | 10A | 600μA | 80V | 100A | ||||||||||||||||||||||||||||||||||
| VS-8ETL06S-M3 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | FRED Pt® | Active | 1 (Unlimited) | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | Standard | TO-263AB (D2PAK) | Fast Recovery =< 500ns, > 200mA (Io) | 5μA @ 600V | 1.05V @ 8A | -65°C~175°C | 600V | 8A | 250ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GI1401-E3/45 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 20 Weeks | Through Hole | Tube | 2011 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -65°C | ROHS3 Compliant | No | 2 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | TO-220-2 | Through Hole | SCHOTTKY | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Rectifier Diodes | SILICON | 1 | Standard | 8A | EFFICIENCY | 1 | 8A | CATHODE | 125A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 5μA @ 50V | 975mV @ 8A | -65°C~150°C | 50V | 8A | 5μA | 50V | 125A | 35 ns | 50V | 35 ns | ||||||||||||||||||||||||||||||||
| FES8HT-E3/45 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 20 Weeks | Through Hole | Tube | 2011 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -55°C | ROHS3 Compliant | No | 2 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | TO-220-2 | Through Hole | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Rectifier Diodes | SILICON | 1 | Standard | 8A | EFFICIENCY | 1 | 8A | 1.5V | CATHODE | 125A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 10μA @ 500V | 1.5V @ 8A | -55°C~150°C | 500V | 8A | 10μA | 500V | 125A | 50 ns | 500V | 50 ns | ||||||||||||||||||||||||||||||||
| GI1402-E3/45 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 20 Weeks | Through Hole | Tube | 2009 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -65°C | ROHS3 Compliant | No | 2 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | TO-220-2 | Through Hole | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Rectifier Diodes | SILICON | 1 | Standard | 8A | EFFICIENCY | 1 | 8A | CATHODE | 125A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 5μA @ 100V | 975mV @ 8A | -65°C~150°C | 100V | 8A | 5μA | 100V | 125A | 35 ns | 100V | 35 ns | |||||||||||||||||||||||||||||||||
| BYW29-50-E3/45 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 2016 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -65°C | ROHS3 Compliant | No | 2 | FREE WHEELING DIODE | TO-220-2 | Through Hole | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Rectifier Diodes | SILICON | 1 | Standard | 8A | EFFICIENCY | 1 | 8A | 1.3V | CATHODE | 100A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 10μA @ 50V | 1.3V @ 20A | -65°C~150°C | 50V | 8A | 10μA | 50V | 100A | 25 ns | 50V | 25 ns | 45pF @ 4V 1MHz | ||||||||||||||||||||||||||||||||
| BYW29-150-E3/45 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 20 Weeks | Through Hole | Tube | 2011 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -65°C | ROHS3 Compliant | Tin | No | 2 | FREE WHEELING DIODE | TO-220-2 | Through Hole | 8541.10.00.80 | e3 | BYW29-150 | 3 | Rectifier Diodes | SILICON | 1 | Standard | 8A | EFFICIENCY | 1 | 8A | 1.3V | CATHODE | 100A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 10μA @ 150V | 1.3V @ 20A | -65°C~150°C | 150V | 8A | 10μA | 150V | 100A | 25 ns | 150V | 25 ns | 45pF @ 4V 1MHz | ||||||||||||||||||||||||||||||
| VS-6TQ040S-M3 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2017 | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | FREE WHEELING DIODE | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 260 | 40 | R-PSSO-G2 | 175°C | SILICON | 1 | SINGLE | Schottky | GENERAL PURPOSE | 1 | 140A | CATHODE | Fast Recovery =< 500ns, > 200mA (Io) | 800μA @ 40V | 600mV @ 6A | -55°C~175°C | 40V | 6A | 40V | 800μA | 400pF @ 5V 1MHz | ||||||||||||||||||||||||||||||||||||||||
| VS-MBRB735-M3 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2017 | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | FREE WHEELING DIODE | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 245 | 30 | R-PSSO-G2 | 150°C | SILICON | 1 | SINGLE | Schottky | GENERAL PURPOSE | 1 | 7.5A | CATHODE | Fast Recovery =< 500ns, > 200mA (Io) | 100μA @ 35V | 570mV @ 7.5A | -65°C~150°C | 35V | 7.5A | 100μA | 400pF @ 5V 1MHz | ||||||||||||||||||||||||||||||||||||||||
| MBRB760-E3/45 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 22 Weeks | Surface Mount | Tube | 2011 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -65°C | 10.45mm | ROHS3 Compliant | No | 3 | FREE WHEELING DIODE, LOW POWER LOSS | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 4.83mm | 9.14mm | Surface Mount | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 245 | 30 | MBRB760 | 3 | R-PSSO-G2 | Rectifier Diodes | SILICON | 1 | Schottky | EFFICIENCY | 1 | 7.5A | 750mV | Common Cathode | Fast Recovery =< 500ns, > 200mA (Io) | 500μA @ 60V | 750mV @ 7.5A | -65°C~150°C | 60V | 7.5A | 500μA | 60V | 150A | 150A | ||||||||||||||||||||||||||||
| GL34G-E3/83 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 19 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | SUPERECTIFIER® | yes | Active | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 175°C | -65°C | 3.68mm | ROHS3 Compliant | No | 2 | HIGH RELIABILITY, FREE WHEELING DIODE | DO-213AA (Glass) | Unknown | 1.68mm | 2mm | Surface Mount | 8541.10.00.70 | e3 | Matte Tin (Sn) | END | WRAP AROUND | 260 | 40 | GL34G | 2 | Rectifier Diodes | SILICON | 1 | Standard | 0.5A | 500mA | 1.2V | ISOLATED | 10A | Single | Standard Recovery >500ns, > 200mA (Io) | 5μA @ 400V | 1.2V @ 500mA | -65°C~175°C | 400V | 500mA | 5μA | 400V | 10A | 10A | 1.5 μs | 400V | 1.5 μs | 4pF @ 4V 1MHz | |||||||||||||||||||||
| BYM07-50-E3/98 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 19 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | SUPERECTIFIER® | yes | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | ROHS3 Compliant | Tin | 2 | HIGH RELIABILITY; FREE WHEELING DIODE | DO-213AA (Glass) | unknown | Surface Mount | 8541.10.00.70 | e3 | END | WRAP AROUND | 260 | 40 | BYM07-50 | 2 | Rectifier Diodes | Not Qualified | SILICON | 1 | Standard | 0.5A | 500mA | 1.25V | ISOLATED | 10A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 5μA @ 50V | 1.25V @ 500mA | -65°C~175°C | 50V | 500mA | 5μA | 50V | 10A | 50 ns | 50V | 50 ns | 7pF @ 4V 1MHz | ||||||||||||||||||||||||||
| 1N6479HE3/96 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2016 | SUPERECTIFIER® | yes | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | ROHS3 Compliant | Tin | 2 | FREE WHEELING DIODE, HIGH RELIABILITY | DO-213AB, MELF (Glass) | unknown | Surface Mount | 8541.10.00.80 | e3 | END | WRAP AROUND | NOT SPECIFIED | NOT SPECIFIED | 1N6479 | 2 | Rectifier Diodes | Not Qualified | SILICON | 1 | Standard | 1A | 1A | ISOLATED | 30A | Single | Standard Recovery >500ns, > 200mA (Io) | 10μA @ 100V | 1.1V @ 1A | -65°C~175°C | 100V | 1A | 10μA | 100V | 30A | 100V | 8pF @ 4V 1MHz | ||||||||||||||||||||||||||||||
| 1N6484HE3/96 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 19 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | SUPERECTIFIER® | yes | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | ROHS3 Compliant | Tin | 2 | FREE WHEELING DIODE, HIGH RELIABILITY | DO-213AB, MELF (Glass) | unknown | Surface Mount | 8541.10.00.80 | e3 | END | WRAP AROUND | NOT SPECIFIED | NOT SPECIFIED | 1N6484 | 2 | Rectifier Diodes | Not Qualified | SILICON | 1 | Standard | 1A | 1A | 1.1V | ISOLATED | 30A | Single | Standard Recovery >500ns, > 200mA (Io) | 10μA @ 1000V | 1.1V @ 1A | -65°C~175°C | 1kV | 1A | 10μA | 1kV | 30A | 1000V | 1kV | 8pF @ 4V 1MHz | |||||||||||||||||||||||||||
| VSSA3L6S-M3/5AT | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 11 Weeks | Surface Mount | Tape & Reel (TR) | 2015 | TMBS® | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -55°C | ROHS3 Compliant | FREE WHEELING DIODE, LOW POWER LOSS | DO-214AC, SMA | unknown | Surface Mount | 8541.10.00.80 | DUAL | C BEND | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-C2 | Rectifier Diodes | Not Qualified | SILICON | 1 | Schottky | EFFICIENCY | 1 | 3A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 1.5mA @ 60V | 580mV @ 3A | -55°C~150°C | 60V | 2.5A | 1.5mA | 60V | 80A | 395pF @ 4V 1MHz | |||||||||||||||||||||||||||||||||||
| ES3A-M3/57T | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 21 Weeks | Surface Mount | Tape & Reel (TR) | 2016 | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | FREE WHEELING DIODE, LOW POWER LOSS | DO-214AB, SMC | unknown | Surface Mount | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | NOT SPECIFIED | NOT SPECIFIED | R-PDSO-C2 | 150°C | Rectifier Diodes | SILICON | 1 | SINGLE | Standard | 3A | EFFICIENCY | 1 | 100A | Fast Recovery =< 500ns, > 200mA (Io) | 10μA @ 50V | 900mV @ 3A | -55°C~150°C | 50V | 3A | 50V | 10μA | 30 ns | 45pF @ 4V 1MHz | ||||||||||||||||||||||||||||||||||||
| BYT52G-TAP | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tape & Box (TB) | 2011 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -55°C | ROHS3 Compliant | Silver, Tin | No | 2 | SOD-57, Axial | Through Hole | 8541.10.00.80 | e2 | Tin/Silver (Sn/Ag) | WIRE | 2 | Rectifier Diodes | SILICON | 1 | Avalanche | 0.85A | 1.4A | 1.3V | ISOLATED | 50A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 5μA @ 400V | 1.3V @ 1A | -55°C~175°C | 400V | 1.4A | 5μA | 400V | 50A | 200 ns | 400V | 200 ns | |||||||||||||||||||||||||||||||||
| SS3P3L-M3/87A | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2016 | eSMP® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 150°C | -55°C | ROHS3 Compliant | No | 3 | FREE WHEELING DIODE, LOW POWER LOSS | TO-277, 3-PowerDFN | Surface Mount | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | FLAT | SS3P3 | 3 | Rectifier Diodes | SILICON | 1 | Schottky | 3A | EFFICIENCY | 1 | TO-277A | 3A | CATHODE | 150A | Common Anode | 250μA | Fast Recovery =< 500ns, > 200mA (Io) | 250μA @ 30V | 470mV @ 3A | -55°C~150°C | 30V | 3A | 250μA | 30V | 150A | ||||||||||||||||||||||||||||||
| BYT54J-TR | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tape & Reel (TR) | 2017 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -55°C | ROHS3 Compliant | Silver, Tin | 1.25A | SOD-57, Axial | Through Hole | 8541.10.00.80 | e2 | Tin/Silver (Sn96.5Ag3.5) | WIRE | 260 | 30 | E-LALF-W2 | Rectifier Diodes | SILICON | 1 | Avalanche | 0.75A | 1.25A | 1.5V | ISOLATED | 30A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 5μA @ 600V | 1.5V @ 1A | -55°C~175°C | 600V | 1.25A | 5μA | 600V | 30A | 100 ns | 600V | 100 ns | ||||||||||||||||||||||||||||||||
| BYX86TR | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tape & Reel (TR) | 2012 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -55°C | ROHS3 Compliant | Silver, Tin | 2A | SOD-57, Axial | Through Hole | 8541.10.00.80 | e2 | Tin/Silver (Sn/Ag) | WIRE | 260 | 30 | E-LALF-W2 | Rectifier Diodes | SILICON | 1 | Avalanche | 2A | GENERAL PURPOSE | 1 | 1V | ISOLATED | 50A | Single | Standard Recovery >500ns, > 200mA (Io) | 1μA @ 1000V | 1V @ 1A | -55°C~175°C | 1kV | 2A | 1μA | 1kV | 50A | 1000V | 4 μs | 1kV | 4 μs | 20pF @ 4V 1MHz | |||||||||||||||||||||||||||||
| BYT53D-TR | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tape & Reel (TR) | 2012 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -55°C | ROHS3 Compliant | Silver, Tin | 1.9A | 2 | SOD-57, Axial | Through Hole | 8541.10.00.80 | e2 | Tin/Silver (Sn96.5Ag3.5) | WIRE | 260 | 30 | 2 | Rectifier Diodes | SILICON | 1 | Avalanche | ULTRA FAST SOFT RECOVERY | 1 | 1.9A | 1.1V | ISOLATED | 50A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 5μA @ 200V | 1.1V @ 1A | -55°C~175°C | 200V | 1.9A | 5μA | 200V | 50A | 50 ns | 200V | 50 ns | ||||||||||||||||||||||||||||||
| SF4001-TR | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tape & Reel (TR) | 2006 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -55°C | ROHS3 Compliant | 1A | No | 2 | SOD-57, Axial | Through Hole | 8541.10.00.80 | e2 | Tin/Silver (Sn96.5Ag3.5) | WIRE | 260 | 30 | Rectifier Diodes | SILICON | 1 | Avalanche | 1A | 1A | 1V | ISOLATED | 30A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 5μA @ 50V | 1V @ 1A | -55°C~175°C | 50V | 1A | 5μA | 50V | 30A | 50 ns | 50V | 50 ns | 76pF @ 4V 1MHz | |||||||||||||||||||||||||||||||
| BYV27-050-TAP | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tape & Box (TB) | 2006 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -55°C | ROHS3 Compliant | Silver, Tin | No | 2 | LOW LEAKAGE CURRENT | SOD-57, Axial | Through Hole | 8541.10.00.80 | e2 | Tin/Silver (Sn/Ag) | WIRE | 2 | SILICON | 1 | Avalanche | 2A | ULTRA FAST RECOVERY | 1 | 2A | 1.07V | ISOLATED | 50A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 1μA @ 55V | 1.07V @ 3A | -55°C~175°C | 55V | 2A | 1μA | 50V | 50A | 25 ns | 50V | 25 ns | |||||||||||||||||||||||||||||||
| UG4B-E3/54 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tape & Reel (TR) | 2017 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -55°C | ROHS3 Compliant | No | 2 | FREE WHEELING DIODE | DO-201AD, Axial | Through Hole | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | 2 | Rectifier Diodes | SILICON | 1 | Standard | 4A | EFFICIENCY | 1 | 4A | 950mV | ISOLATED | 150A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 5μA @ 100V | 950mV @ 4A | -55°C~150°C | 100V | 4A | 5μA | 100V | 150A | 30 ns | 100V | 30 ns | 20pF @ 4V 1MHz | ||||||||||||||||||||||||||||||
| S4PKHM3_A/H | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2017 | Automotive, AEC-Q101, eSMP® | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | FREE WHEELING DIODE | TO-277, 3-PowerDFN | not_compliant | Surface Mount | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | FLAT | 260 | 30 | R-PDSO-F3 | 150°C | SILICON | 1 | SINGLE | Standard | 4A | GENERAL PURPOSE | 1 | TO-277A | 100A | CATHODE | Standard Recovery >500ns, > 200mA (Io) | 10μA @ 800V | 1.1V @ 4A | -55°C~150°C | 800V | 4A | 800V | 10μA | 2.5 μs | 30pF @ 4V 1MHz | ||||||||||||||||||||||||||||||||||
| SBYV28-150-E3/54 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tape & Reel (TR) | 2012 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -55°C | ROHS3 Compliant | No | 2 | LOW LEAKAGE CURRENT, FREE WHEELING DIODE | DO-201AD, Axial | Through Hole | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | 2 | Rectifier Diodes | SILICON | 1 | SINGLE | Standard | EFFICIENCY | 1 | 3.5A | 1.1V | ISOLATED | 90A | Fast Recovery =< 500ns, > 200mA (Io) | 5μA @ 150V | 1.1V @ 3.5A | -55°C~150°C | 150V | 3.5A | 5μA | 150V | 90A | 20 ns | 150V | 20 ns | 20pF @ 4V 1MHz | |||||||||||||||||||||||||||||||
| BYV16-TR | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tape & Reel (TR) | 2012 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -55°C | ROHS3 Compliant | Silver, Tin | 1.5A | No | 2 | SOD-57, Axial | Through Hole | 8541.10.00.80 | e2 | Tin/Silver (Sn/Ag) | WIRE | 260 | 30 | 2 | Rectifier Diodes | SILICON | 1 | Avalanche | FAST SOFT RECOVERY | 1 | 1.5A | 1.5V | ISOLATED | 40A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 5μA @ 1000V | 1.5V @ 1A | -55°C~175°C | 1kV | 1.5A | 5μA | 1kV | 40A | 1000V | 300 ns | 1kV | 300 ns | ||||||||||||||||||||||||||||
| VS-APH3006-F3 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 11 Weeks | Through Hole | Tube | 2009 | FRED Pt® | Obsolete | 1 (Unlimited) | 3 | EAR99 | 175°C | -65°C | 15.87mm | ROHS3 Compliant | No | 3 | FREEWHEELING DIODE | TO-247-3 | Unknown | 20.7mm | 5.31mm | Through Hole | 8541.10.00.80 | 3 | Rectifier Diodes | SILICON | 1 | Standard | HYPERFAST SOFT RECOVERY | 1 | TO-247AC | 30A | 2.65V | CATHODE | 180A | Single | Standard Recovery >500ns, > 200mA (Io) | 30μA @ 600V | 2.65V @ 30A | -65°C~175°C | 600V | 30A | 30μA | 600V | 180A | 180A | 35 ns | 600V | 45 ns | |||||||||||||||||||||||||||||
| VS-ETU3006STRR-M3 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2016 | FRED Pt® | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | unknown | Surface Mount | 8541.10.00.80 | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSSO-G2 | 175°C | Rectifier Diodes | Not Qualified | SILICON | 1 | Standard | ULTRA FAST SOFT RECOVERY | 1 | CATHODE | 200A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 30μA @ 600V | 2V @ 30A | -65°C~175°C | 600V | 30A | 20nA | 45 ns | 600V | 45 ns |