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RF/IF & RFID
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Vishay Semiconductor Diodes Division(13890)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Mounting Type | Operating Temperature | Technology | HTS Code | JESD-609 Code | Terminal Finish | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | JESD-30 Code | Subcategory | Qualification Status | Diode Element Material | Number of Elements | Configuration | Diode Type | Output Current-Max | Number of Phases | Rep Pk Reverse Voltage-Max | Non-rep Pk Forward Current-Max | Forward Current | Forward Voltage | Case Connection | Breakdown Voltage-Min | Max Surge Current | Element Configuration | Max Reverse Leakage Current | Supplier Device Package | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Average Rectified Current | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Max Forward Surge Current (Ifsm) | Current - Average Rectified (Io) | Voltage - Peak Reverse (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GBLA10-E3/45 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2011 | yes | Active | 1 (Unlimited) | 4 | 20.9mm | ROHS3 Compliant | No | 4 | UL RECOGNIZED | 4-SIP, GBL | 10.7mm | 3.56mm | Through Hole | -55°C~150°C TJ | Standard | e3 | Matte Tin (Sn) | 4 | Bridge Rectifier Diodes | SILICON | 1 | Single Phase | 3A | 1 | 4A | 1V | ISOLATED | 120A | Single | 5μA | 5μA @ 1000V | 1V @ 4A | 5μA | 1kV | 120A | 3A | |||||||||||||||||||||||
| GBLA02-E3/51 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Bulk | 2011 | yes | Active | 1 (Unlimited) | 4 | EAR99 | 20.9mm | ROHS3 Compliant | No | 4 | UL RECOGNIZED | 4-SIP, GBL | 10.7mm | 3.56mm | Through Hole | -55°C~150°C TJ | Avalanche | e3 | Matte Tin (Sn) | 4 | Bridge Rectifier Diodes | SILICON | 4 | Single Phase | 3A | 1 | 4A | ISOLATED | 120A | Single | 5μA | 5μA @ 200V | 1.1V @ 4A | 5μA | 200V | 3A | ||||||||||||||||||||||||
| GBL04-E3/45 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2008 | yes | Active | 1 (Unlimited) | 4 | 20.9mm | ROHS3 Compliant | Lead Free | No | 4 | UL RECOGNIZED | 4-SIP, GBL | 10.7mm | 3.56mm | Through Hole | -55°C~150°C TJ | Standard | e3 | Matte Tin (Sn) | 4 | Bridge Rectifier Diodes | SILICON | 1 | Single Phase | 3A | 1 | 4A | 1V | ISOLATED | 150A | Single | 5μA | 5μA @ 400V | 1.1V @ 4A | 5μA | 400V | 150A | 3A | ||||||||||||||||||||||
| G2SB60-E3/51 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Bulk | 2011 | yes | Active | 1 (Unlimited) | 4 | 20.9mm | ROHS3 Compliant | No | 4 | UL RECOGNIZED | 4-SIP, GBL | 10.7mm | 3.56mm | Through Hole | -55°C~150°C TJ | Standard | e3 | Matte Tin (Sn) | 4 | Bridge Rectifier Diodes | SILICON | 1 | Single Phase | 1 | 1.5A | 1V | ISOLATED | 80A | Single | 5μA | 5μA @ 200V | 1V @ 750mA | 5μA | 600V | 80A | |||||||||||||||||||||||||
| GBL005-E3/51 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Bulk | 2008 | yes | Active | 1 (Unlimited) | 4 | EAR99 | 20.9mm | ROHS3 Compliant | No | 4 | UL RECOGNIZED | 4-SIP, GBL | 10.7mm | 3.56mm | Through Hole | -55°C~150°C TJ | Standard | e3 | Matte Tin (Sn) | 4 | Bridge Rectifier Diodes | SILICON | 1 | Single Phase | 3A | 1 | 4A | 1V | ISOLATED | 150A | Single | 5μA | 5μA @ 50V | 1.1V @ 4A | 5μA | 50V | 150A | 3A | ||||||||||||||||||||||
| GBLA06-M3/45 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2017 | Active | 1 (Unlimited) | 4 | EAR99 | ROHS3 Compliant | UL RECOGNIZED | 4-SIP, GBL | unknown | Through Hole | -55°C~150°C TJ | Standard | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | R-PSIP-T4 | SILICON | 4 | BRIDGE, 4 ELEMENTS | Single Phase | 3A | 1 | 120A | ISOLATED | 600V | 5μA @ 600V | 1V @ 4A | 4A | 600V | ||||||||||||||||||||||||||||||
| G3SBA20-M3/45 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Through Hole | Tube | 2011 | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | 4-SIP, GBU | unknown | Through Hole | -55°C~150°C TJ | Standard | 8541.10.00.80 | Bridge Rectifier Diodes | 4 | BRIDGE, 4 ELEMENTS | Single Phase | 4A | 80A | 5μA @ 200V | 1V @ 2A | 2.3A | 200V | |||||||||||||||||||||||||||||||||||||||
| G3SBA80-M3/51 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Through Hole | Tray | 2011 | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | 4-SIP, GBU | unknown | Through Hole | -55°C~150°C TJ | Standard | 8541.10.00.80 | Bridge Rectifier Diodes | 4 | BRIDGE, 4 ELEMENTS | Single Phase | 4A | 80A | 5μA @ 800V | 1V @ 2A | 2.3A | 800V | |||||||||||||||||||||||||||||||||||||||
| GBLA10-M3/51 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tray | 2017 | Active | 1 (Unlimited) | 4 | EAR99 | ROHS3 Compliant | UL RECOGNIZED | 4-SIP, GBL | unknown | Through Hole | -55°C~150°C TJ | Standard | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | R-PSIP-T4 | SILICON | 4 | BRIDGE, 4 ELEMENTS | Single Phase | 3A | 1 | 120A | ISOLATED | 1000V | 5μA @ 1000V | 1V @ 4A | 4A | 1kV | ||||||||||||||||||||||||||||||
| GBL01-M3/45 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2016 | Active | 1 (Unlimited) | 4 | EAR99 | ROHS3 Compliant | UL RECOGNIZED | 4-SIP, GBL | unknown | Through Hole | -55°C~150°C TJ | Standard | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | R-PSIP-T4 | SILICON | 4 | BRIDGE, 4 ELEMENTS | Single Phase | 3A | 1 | 150A | ISOLATED | 100V | 5μA @ 100V | 1.1V @ 4A | 4A | 100V | ||||||||||||||||||||||||||||||
| GBL08-M3/51 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tray | 2017 | Active | 1 (Unlimited) | 4 | EAR99 | ROHS3 Compliant | UL RECOGNIZED | 4-SIP, GBL | unknown | Through Hole | -55°C~150°C TJ | Standard | 8541.10.00.80 | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | R-PSIP-T4 | SILICON | 4 | BRIDGE, 4 ELEMENTS | Single Phase | 3A | 1 | 150A | ISOLATED | 800V | 10μA @ 800V | 1V @ 2A | 4A | 800V | |||||||||||||||||||||||||||||
| GBL06-M3/45 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2016 | Active | 1 (Unlimited) | 4 | EAR99 | ROHS3 Compliant | UL RECOGNIZED | 4-SIP, GBL | unknown | Through Hole | -55°C~150°C TJ | Standard | 8541.10.00.80 | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | R-PSIP-T4 | SILICON | 4 | BRIDGE, 4 ELEMENTS | Single Phase | 3A | 1 | 150A | ISOLATED | 600V | 5μA @ 600V | 1.1V @ 4A | 4A | 600V | |||||||||||||||||||||||||||||
| GBL10-M3/45 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2017 | Active | 1 (Unlimited) | 4 | EAR99 | ROHS3 Compliant | UL RECOGNIZED | 4-SIP, GBL | unknown | Through Hole | -55°C~150°C TJ | Standard | 8541.10.00.80 | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | R-PSIP-T4 | SILICON | 4 | BRIDGE, 4 ELEMENTS | Single Phase | 3A | 1 | 150A | ISOLATED | 1000V | 5μA @ 1000V | 1.1V @ 4A | 4A | 1kV | |||||||||||||||||||||||||||||
| GBL02-M3/51 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tray | 2017 | Active | 1 (Unlimited) | 4 | EAR99 | ROHS3 Compliant | UL RECOGNIZED | 4-SIP, GBL | unknown | Through Hole | -55°C~150°C TJ | Standard | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | R-PSIP-T4 | SILICON | 4 | BRIDGE, 4 ELEMENTS | Single Phase | 3A | 1 | 150A | ISOLATED | 200V | 5μA @ 200V | 1.1V @ 4A | 4A | 200V | ||||||||||||||||||||||||||||||
| G3SBA60-M3/45 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Through Hole | Tube | 2011 | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | 4-SIP, GBU | unknown | Through Hole | -55°C~150°C TJ | Standard | 8541.10.00.80 | Bridge Rectifier Diodes | 4 | BRIDGE, 4 ELEMENTS | Single Phase | 4A | 80A | 5μA @ 600V | 1V @ 2A | 2.3A | 600V | |||||||||||||||||||||||||||||||||||||||
| GBL06-M3/51 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tray | 2017 | Active | 1 (Unlimited) | 4 | EAR99 | ROHS3 Compliant | UL RECOGNIZED | 4-SIP, GBL | unknown | Through Hole | -55°C~150°C TJ | Standard | 8541.10.00.80 | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | R-PSIP-T4 | SILICON | 4 | BRIDGE, 4 ELEMENTS | Single Phase | 3A | 1 | 150A | ISOLATED | 600V | 5μA @ 600V | 1.1V @ 4A | 4A | 600V | |||||||||||||||||||||||||||||
| GBU6B-M3/51 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Through Hole | Tray | 2015 | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | 4 | 4-SIP, GBU | Unknown | Through Hole | -55°C~150°C TJ | Standard | NOT SPECIFIED | NOT SPECIFIED | Bridge Rectifier Diodes | 4 | Single Phase | 6A | 6A | 1V | 5μA @ 100V | 1V @ 6A | 100V | ||||||||||||||||||||||||||||||||||||||
| GBU6J-M3/51 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Through Hole | Tray | 2015 | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | 4-SIP, GBU | unknown | Through Hole | -55°C~150°C TJ | Standard | 8541.10.00.80 | NOT SPECIFIED | NOT SPECIFIED | Bridge Rectifier Diodes | 4 | BRIDGE, 4 ELEMENTS | Single Phase | 6A | 175A | 5μA @ 600V | 1V @ 6A | 6A | 600V | |||||||||||||||||||||||||||||||||||||
| GBU6A-M3/51 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Through Hole | Tray | 2015 | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | 4-SIP, GBU | unknown | Through Hole | -55°C~150°C TJ | Standard | 8541.10.00.80 | NOT SPECIFIED | NOT SPECIFIED | Bridge Rectifier Diodes | 4 | BRIDGE, 4 ELEMENTS | Single Phase | 6A | 175A | 5μA @ 50V | 1V @ 6A | 3.8A | 50V | |||||||||||||||||||||||||||||||||||||
| GBU8A-M3/51 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Through Hole | Tray | 2014 | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | 4-SIP, GBU | unknown | Through Hole | -55°C~150°C TJ | Standard | Single Phase | 5μA @ 50V | 1V @ 8A | 3.9A | 50V | |||||||||||||||||||||||||||||||||||||||||||||
| GBU4M-M3/51 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Through Hole | Tray | 2015 | Active | 1 (Unlimited) | 4 | EAR99 | ROHS3 Compliant | UL RECOGNIZED | 4-SIP, GBU | unknown | Through Hole | -55°C~150°C TJ | Standard | 8541.10.00.80 | R-PSFM-T4 | Bridge Rectifier Diodes | SILICON | 4 | BRIDGE, 4 ELEMENTS | Single Phase | 3A | 1 | 150A | ISOLATED | 1000V | 5μA @ 1000V | 1V @ 4A | 4A | 1kV | ||||||||||||||||||||||||||||||||
| GBU6G-M3/51 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Through Hole | Tray | 2015 | Active | 1 (Unlimited) | ROHS3 Compliant | 4-SIP, GBU | Through Hole | -55°C~150°C TJ | Standard | Single Phase | GBU | 5μA @ 400V | 1V @ 6A | 6A | 400V | ||||||||||||||||||||||||||||||||||||||||||||||
| GBU6M-M3/51 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Through Hole | Tray | 2015 | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Tin | 4 | 4-SIP, GBU | unknown | Through Hole | -55°C~150°C TJ | Standard | NOT SPECIFIED | NOT SPECIFIED | Bridge Rectifier Diodes | 4 | Single Phase | 6A | 5μA @ 1000V | 1V @ 6A | 5μA | 800V | 175A | 6A | 1kV | |||||||||||||||||||||||||||||||||||
| GBU6G-E3/51 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Bulk | 2008 | yes | Active | 1 (Unlimited) | 4 | 22.3mm | ROHS3 Compliant | No | 4 | UL RECOGNIZED | 4-SIP, GBU | 18.8mm | 3.56mm | Through Hole | -55°C~150°C TJ | Standard | e3 | Matte Tin (Sn) | GBU6G | 4 | Bridge Rectifier Diodes | SILICON | 1 | Single Phase | 3.8A | 1 | 6A | 1V | ISOLATED | 175A | Single | 5μA | 5μA @ 400V | 1V @ 6A | 5μA | 400V | 175A | 3.8A | ||||||||||||||||||||||
| BU1210-E3/51 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Through Hole | Bulk | 2012 | yes | Active | 1 (Unlimited) | 4 | 22.3mm | ROHS3 Compliant | Tin | 4 | UL RECOGNIZED | 4-SIP, BU | unknown | 18.8mm | 4.1mm | Through Hole | -55°C~150°C TJ | Standard | e3 | NOT SPECIFIED | NOT SPECIFIED | 4 | Bridge Rectifier Diodes | Not Qualified | SILICON | 1 | Single Phase | 1 | 3.4A | 1.05V | ISOLATED | 150A | 5μA | 5μA @ 1000V | 1.05V @ 6A | 5μA | 1kV | 150A | 150A | ||||||||||||||||||||||
| GBU8J-M3/51 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tray | 2015 | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | 4 | 4-SIP, GBU | unknown | Through Hole | -55°C~150°C TJ | Standard | 1 | Single Phase | 1V | 5μA @ 600V | 1V @ 8A | 200A | 8A | 600V | |||||||||||||||||||||||||||||||||||||||||
| GBU8K-M3/51 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Through Hole | Tray | 2014 | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | 4-SIP, GBU | unknown | Through Hole | -55°C~150°C TJ | Standard | Single Phase | 5μA @ 800V | 1V @ 8A | 8A | 800V | |||||||||||||||||||||||||||||||||||||||||||||
| GBU8G-M3/51 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Through Hole | Tray | 2015 | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | 4-SIP, GBU | unknown | Through Hole | -55°C~150°C TJ | Standard | Single Phase | 5μA @ 400V | 1V @ 8A | 8A | 400V | |||||||||||||||||||||||||||||||||||||||||||||
| BU1010A-E3/45 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Through Hole | Tube | 2012 | yes | Active | 1 (Unlimited) | 4 | 22.3mm | ROHS3 Compliant | Lead Free | Tin | 4 | UL RECOGNIZED | 4-SIP, BU | unknown | 18.8mm | 4.1mm | Through Hole | -55°C~150°C TJ | Standard | e3 | NOT SPECIFIED | NOT SPECIFIED | BU1010 | 4 | Bridge Rectifier Diodes | Not Qualified | SILICON | 4 | Single Phase | 3A | 1 | 1000V | 3A | 880mV | ISOLATED | 90A | Single | 5μA | 5μA @ 1000V | 1.1V @ 5A | 10A | 5μA | 1kV | 90A | |||||||||||||||||
| GBU4K-M3/51 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tray | 2015 | Active | 1 (Unlimited) | 4 | EAR99 | ROHS3 Compliant | UL RECOGNIZED | 4-SIP, GBU | unknown | Through Hole | -55°C~150°C TJ | Standard | 8541.10.00.80 | R-PSFM-T4 | Bridge Rectifier Diodes | SILICON | 4 | BRIDGE, 4 ELEMENTS | Single Phase | 3A | 1 | 150A | ISOLATED | 800V | 5μA @ 800V | 1V @ 4A | 4A | 800V |