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Vishay Semiconductor Diodes Division(13890)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Mounting Type | Voltage - Rated DC | Capacitance | Current | HTS Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | JESD-30 Code | Operating Temperature (Max) | Subcategory | Qualification Status | Voltage | Diode Element Material | Number of Elements | Configuration | Diode Type | Output Current-Max | Application | Number of Phases | JEDEC-95 Code | Non-rep Pk Forward Current-Max | Output Current | Polarity | Forward Current | Forward Voltage | Case Connection | Max Surge Current | Element Configuration | Power Dissipation | Max Reverse Leakage Current | Supplier Device Package | Speed | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Operating Temperature - Junction | Max Reverse Voltage (DC) | Average Rectified Current | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Max Forward Surge Current (Ifsm) | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Natural Thermal Resistance | Reverse Recovery Time | Reverse Voltage | Reverse Voltage (DC) | Recovery Time | Capacitance @ Vr, F |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| VS-1N1183 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Chassis, Stud | Bulk | 2008 | Active | 1 (Unlimited) | 1 | EAR99 | 190°C | -65°C | 20.02mm | ROHS3 Compliant | No | 2 | LOW LEAKAGE CURRENT | DO-203AB, DO-5, Stud | 22.9mm | 17.35mm | Chassis, Stud Mount | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | 1N1183 | O-MUPM-D1 | Rectifier Diodes | SILICON | 1 | Standard | POWER | 1 | 35A | 1.7V | CATHODE | 595A | Single | Standard Recovery >500ns, > 200mA (Io) | 10mA @ 50V | 1.7V @ 110A | -65°C~190°C | 50V | 35A | 2.5mA | 50V | 595A | 595A | 0.25 °C/W | 50V | |||||||||||||||||||||||||||||||||||
| VS-1N3210 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Chassis, Stud | Bulk | 2011 | Active | 1 (Unlimited) | 1 | EAR99 | 175°C | -65°C | ROHS3 Compliant | No | 2 | DO-203AB, DO-5, Stud | Unknown | Chassis, Stud Mount | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | 1N3210 | O-MUPM-D1 | SILICON | 1 | Standard | GENERAL PURPOSE | 1 | 15A | 1.5V | CATHODE | 250A | Single | Standard Recovery >500ns, > 200mA (Io) | 10mA @ 200V | 1.5V @ 15A | -65°C~175°C | 200V | 15A | 10mA | 200V | 297A | 250A | 0.25 °C/W | 200V | |||||||||||||||||||||||||||||||||||||||
| VS-150K40A | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Chassis, Stud | Bulk | 2007 | Active | 1 (Unlimited) | 1 | EAR99 | 200°C | -40°C | ROHS3 Compliant | No | 2 | FREE WHEELING DIODE | DO-205AA, DO-8, Stud | Unknown | Chassis, Stud Mount | 8541.10.00.80 | Nickel (Ni) | UPPER | HIGH CURRENT CABLE | 150K40 | O-MUPM-H1 | SILICON | 1 | Standard | GENERAL PURPOSE | 1 | 150A | 1.33V | CATHODE | 3.74kA | Single | Standard Recovery >500ns, > 200mA (Io) | 35mA @ 400V | 1.33V @ 471A | -40°C~200°C | 400V | 150A | 35mA | 400V | 3.74kA | 3.74kA | 0.1 °C/W | 400V | |||||||||||||||||||||||||||||||||||||||
| VS-40HFR120 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Chassis, Stud | Bulk | 2000 | Active | 1 (Unlimited) | 1 | EAR99 | 190°C | -65°C | 20.08mm | ROHS3 Compliant | No | 2 | DO-203AB, DO-5, Stud | Unknown | 22.9mm | 17.4mm | Chassis, Stud Mount | 8541.10.00.80 | UPPER | SOLDER LUG | O-MUPM-D1 | SILICON | 1 | Standard, Reverse Polarity | GENERAL PURPOSE | 1 | 40A | 1.3V | 595A | Single | Standard Recovery >500ns, > 200mA (Io) | 9mA @ 1200V | 1.3V @ 125A | -65°C~190°C | 1.2kV | 40A | 9mA | 1.2kV | 595A | 595A | 1200V | 0.25 °C/W | 1.2kV | |||||||||||||||||||||||||||||||||||||||
| VS-80PFR80 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Chassis, Stud | Bulk | 2011 | Active | 1 (Unlimited) | 1 | EAR99 | 180°C | -55°C | 36.4mm | ROHS3 Compliant | No | 2 | DO-203AB, DO-5, Stud | Unknown | 17.25mm | 18.9mm | Chassis, Stud Mount | 8541.10.00.80 | UPPER | SOLDER LUG | O-MUPM-D1 | SILICON | 1 | Standard, Reverse Polarity | GENERAL PURPOSE | 1 | 80A | 1.4V | 1.57kA | Single | Standard Recovery >500ns, > 200mA (Io) | 1.4V @ 220A | -55°C~180°C | 800V | 80A | 9mA | 800V | 1.57kA | 1.57kA | 800V | ||||||||||||||||||||||||||||||||||||||||||
| RS3D-E3/57T | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 11 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -55°C | 7.0866mm | ROHS3 Compliant | Lead Free | 3A | No | 2 | FREE WHEELING DIODE | DO-214AB, SMC | Unknown | 2.413mm | 6.223mm | Surface Mount | 200V | 44pF | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 30 | RS3D | 2 | Rectifier Diodes | SILICON | 1 | Standard | EFFICIENCY | 1 | 3A | 3A | 1.3V | 100A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 10μA @ 200V | 1.3V @ 2.5A | -55°C~150°C | 200V | 3A | 10μA | 200V | 100A | 100A | 150 ns | 150 ns | 44pF @ 4V 1MHz | ||||||||||||||||||||||||||
| VS-240U120D | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Chassis, Stud | Bulk | 2007 | Active | 1 (Unlimited) | 1 | EAR99 | 180°C | -40°C | ROHS3 Compliant | 2 | FREE WHEELING DIODE | DO-205AB, DO-9, Stud | Stud Mount | 8541.10.00.80 | UPPER | HIGH CURRENT CABLE | NOT SPECIFIED | NOT SPECIFIED | O-MUPM-H1 | SILICON | 1 | Standard | HIGH VOLTAGE | 1 | 320A | 1.33V | CATHODE | 4.7kA | Single | Standard Recovery >500ns, > 200mA (Io) | 15mA @ 1200V | 1.33V @ 750A | -40°C~180°C | 1.2kV | 320A | 15mA | 1.2kV | 4.7kA | 1200V | 0.8 °C/W | 600V | |||||||||||||||||||||||||||||||||||||||||
| FES16BT-E3/45 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount, Through Hole | Tube | yes | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -65°C | ROHS3 Compliant | Lead Free | No | 2 | FREE WHEELING DIODE | TO-220-2 | Through Hole | 8541.10.00.80 | e3 | Matte Tin (Sn) | FES16B | 3 | Rectifier Diodes | SILICON | 1 | Standard | EFFICIENCY | 1 | 1A | 975mV | CATHODE | 250A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 10μA @ 100V | 975mV @ 16A | -65°C~150°C | 100V | 16A | 10μA | 600V | 250A | 35 ns | 100V | 35 ns | ||||||||||||||||||||||||||||||||||||||||
| VBT2045BP-E3/4W | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount, Through Hole | Tube | 2012 | TMBS® | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -40°C | 10.4394mm | ROHS3 Compliant | Lead Free | No | 2 | LOW POWER LOSS | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 9.144mm | 4.826mm | Surface Mount | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | VBT2045 | 3 | Rectifier Diodes | SILICON | 1 | Schottky | EFFICIENCY | 1 | 20A | 660mV | CATHODE | 100A | Common Anode | 2mA | Fast Recovery =< 500ns, > 200mA (Io) | 2mA @ 45V | 660mV @ 20A | 200°C Max | 45V | 20A | 2mA | 45V | 160A | 160A | 20A DC | |||||||||||||||||||||||||||||||||
| DGP30-E3/54 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 22 Weeks | Through Hole | Tape & Reel (TR) | 2009 | SUPERECTIFIER® | yes | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | ROHS3 Compliant | No | 2 | FREE WHEELING DIODE | DO-201AD, Axial | Through Hole | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | DGP30 | 2 | Rectifier Diodes | SILICON | 1 | Standard | 3A | GENERAL PURPOSE | 1 | 3A | 1.2V | ISOLATED | 100A | Single | Standard Recovery >500ns, > 200mA (Io) | 5μA @ 1500V | 1.2V @ 3A | -65°C~175°C | 1.5kV | 3A | 5μA | 1.5kV | 100A | 1500V | 20 μs | 1.5kV | 20 μs | 40pF @ 4V 1MHz | ||||||||||||||||||||||||||||||||||
| VB20150SG-E3/4W | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tube | 2013 | TMBS® | yes | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -55°C | ROHS3 Compliant | No | 3 | FREE WHEELING DIODE, LOW POWER LOSS | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | 8541.10.00.80 | e3 | Matte Tin (Sn) | GULL WING | 245 | 40 | VB20150S | 3 | R-PSSO-G2 | Rectifier Diodes | SILICON | 1 | Schottky | EFFICIENCY | 1 | 20A | CATHODE | 140A | Single | 200μA | Fast Recovery =< 500ns, > 200mA (Io) | 200μA @ 150V | 1.6V @ 20A | -55°C~150°C | 150V | 20A | 200μA | 150V | 140A | |||||||||||||||||||||||||||||||||||||
| VS-ETL1506FP-M3 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Through Hole | Bulk | 2011 | FRED Pt® | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | 10.36mm | ROHS3 Compliant | No | 2 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | TO-220-2 Full Pack | Unknown | 16.07mm | 4.93mm | Through Hole | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | ETL1506 | 2 | Rectifier Diodes | SILICON | 1 | Standard | UFSRHP | 1 | 15A | 1.1V | ISOLATED | 200A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 15μA @ 600V | 1.07V @ 15A | -65°C~175°C | 600V | 15A | 10nA | 600V | 200A | 200A | 270 ns | 600V | 210 ns | ||||||||||||||||||||||||||||||||||
| VS-ETH1506-M3 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Through Hole | Bulk | FRED Pt® | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | 10.67mm | ROHS3 Compliant | No | 2 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | TO-220-2 | Unknown | 9.02mm | 4.83mm | Through Hole | 8541.10.00.80 | ETH1506 | 3 | Rectifier Diodes | SILICON | 1 | Standard | HYPERFAST SOFT RECOVERY HIGH POWER | 1 | 15A | 2.45V | CATHODE | 160A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 15μA @ 600V | 2.45V @ 15A | -65°C~175°C | 600V | 15A | 10nA | 600V | 160A | 160A | 36 ns | 600V | 29 ns | |||||||||||||||||||||||||||||||||||||
| VS-5EWX06FN-M3 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Bulk | 2012 | FRED Pt® | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | 6.73mm | ROHS3 Compliant | 3 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | TO-252-3, DPak (2 Leads + Tab), SC-63 | Unknown | 2.39mm | 6.22mm | Surface Mount | 8541.10.00.80 | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 5EWX06 | 3 | R-PSSO-G2 | Rectifier Diodes | Not Qualified | SILICON | 1 | Standard | 5A | HYPERFAST SOFT RECOVERY HIGH POWER | 1 | TO-252AA | 5A | 1.55V | CATHODE | 50A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 20μA @ 600V | 2.9V @ 5A | -65°C~175°C | 600V | 5A | 20μA | 600V | 50A | 50A | 21 ns | 600V | 18 ns | ||||||||||||||||||||||||||||||
| VS-ETU3006-M3 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Through Hole | Tube | FRED Pt® | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | 10.41mm | ROHS3 Compliant | No | 2 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | TO-220-2 | Unknown | 15.49mm | 4.57mm | Through Hole | 8541.10.00.80 | 3 | Rectifier Diodes | SILICON | 1 | Standard | UFSRHP | 1 | 30A | 2V | CATHODE | 200A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 30μA @ 600V | 2V @ 30A | -65°C~175°C | 600V | 30A | 20nA | 600V | 200A | 200A | 45 ns | 600V | 45 ns | ||||||||||||||||||||||||||||||||||||||
| MBR1635-E3/45 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Through Hole | Tube | 2009 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -65°C | ROHS3 Compliant | Lead Free | No | 2 | FREE WHEELING DIODE, LOW POWER LOSS | TO-220-2 | Through Hole | 8541.10.00.80 | e3 | Matte Tin (Sn) | 260 | 30 | MBR1635 | 3 | Rectifier Diodes | SILICON | 1 | Schottky | EFFICIENCY | 1 | 16A | 630mV | CATHODE | 150A | Single | 200μA | Fast Recovery =< 500ns, > 200mA (Io) | 200μA @ 35V | 630mV @ 16A | -65°C~150°C | 35V | 16A | 200μA | 35V | 150A | ||||||||||||||||||||||||||||||||||||||
| VS-40EPS12-M3 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2015 | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | TO-247-2 | unknown | Through Hole | 8541.10.00.80 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | NOT APPLICABLE | NOT APPLICABLE | R-PSFM-T2 | 150°C | SILICON | 1 | SINGLE | Standard | HIGH VOLTAGE | 1 | 475A | CATHODE | Standard Recovery >500ns, > 200mA (Io) | 100μA @ 1200V | 1V @ 20A | -40°C~150°C | 1.2kV | 40A | 1200V | |||||||||||||||||||||||||||||||||||||||||||||||||
| VS-1N1187A | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Chassis, Stud | Bulk | 2014 | Active | 1 (Unlimited) | 1 | EAR99 | 190°C | -65°C | ROHS3 Compliant | 2 | LOW LEAKAGE CURRENT | DO-203AB, DO-5, Stud | Unknown | Chassis, Stud Mount | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | NOT SPECIFIED | 1N1187 | O-MUPM-D1 | Rectifier Diodes | SILICON | 1 | Standard | POWER | 1 | 40A | 1.3V | CATHODE | 800A | Single | Standard Recovery >500ns, > 200mA (Io) | 2.5mA @ 300V | 1.3V @ 126A | -65°C~200°C | 300V | 40A | 2.5mA | 300V | 800A | 0.25 °C/W | 300V | |||||||||||||||||||||||||||||||||||||
| VS-25F100 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Chassis, Stud | Bulk | 1998 | Active | 1 (Unlimited) | 1 | EAR99 | 175°C | -65°C | 12.69mm | ROHS3 Compliant | 2 | DO-203AA, DO-4, Stud | Unknown | 31.8mm | 11mm | Chassis, Stud Mount | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | NOT SPECIFIED | O-MUPM-D1 | SILICON | 1 | Standard | GENERAL PURPOSE | 1 | 25A | 900mV | CATHODE | 373A | Single | Standard Recovery >500ns, > 200mA (Io) | 12mA @ 1000V | 1.3V @ 78A | -65°C~175°C | 1kV | 25A | 12mA | 1kV | 373A | 373A | 1000V | 0.5 °C/W | 1kV | |||||||||||||||||||||||||||||||||||
| VS-1N2129A | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Chassis, Stud | Bulk | 2011 | Active | 1 (Unlimited) | 1 | EAR99 | 190°C | -65°C | ROHS3 Compliant | No | 2 | LOW LEAKAGE CURRENT | DO-203AB, DO-5, Stud | Unknown | Chassis, Stud Mount | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | 1N2129 | O-MUPM-D1 | Rectifier Diodes | SILICON | 1 | Standard | POWER | 1 | 60A | 1.3V | CATHODE | 900A | Single | Standard Recovery >500ns, > 200mA (Io) | 10mA @ 100V | 1.3V @ 188A | -65°C~200°C | 100V | 60A | 10mA | 100V | 900A | 900A | 0.25 °C/W | 100V | |||||||||||||||||||||||||||||||||||||
| VS-85HF80 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Chassis, Stud | Bulk | 2016 | Active | 1 (Unlimited) | 1 | EAR99 | 180°C | -65°C | 36.5mm | ROHS3 Compliant | No | 2 | DO-203AB, DO-5, Stud | Unknown | 17.35mm | Chassis, Stud Mount | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | O-MUPM-D1 | SILICON | 1 | Standard | GENERAL PURPOSE | 1 | 85A | 1.2V | CATHODE | 1.8kA | Single | Standard Recovery >500ns, > 200mA (Io) | 9mA @ 800V | 1.2V @ 267A | -65°C~180°C | 800V | 85A | 9mA | 800V | 1.8kA | 1.369kA | 0.25 °C/W | 500 ns | 800V | |||||||||||||||||||||||||||||||||||||
| VI30100S-E3/4W | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Through Hole | Tube | 2011 | TMBS® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 150°C | -40°C | ROHS3 Compliant | Lead Free | No | 3 | FREE WHEELING DIODE, LOW POWER LOSS | TO-262-3 Long Leads, I2Pak, TO-262AA | Through Hole | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | 3 | Rectifier Diodes | SILICON | 1 | Schottky | EFFICIENCY | 1 | 30A | Standard | 30A | 910mV | CATHODE | 250A | Common Anode | 1mA | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 100V | 910mV @ 30A | -40°C~150°C | 100V | 30A | 1mA | 100V | 250A | |||||||||||||||||||||||||||||||||||||
| V30120SG-E3/4W | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Through Hole | Tube | 2016 | TMBS® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 150°C | -40°C | ROHS3 Compliant | FREE WHEELING DIODE, LOW POWER LOSS | TO-220-3 | unknown | Through Hole | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | NOT APPLICABLE | NOT APPLICABLE | 3 | R-PSFM-T3 | Rectifier Diodes | Not Qualified | SILICON | 1 | Schottky | EFFICIENCY | 1 | TO-220AB | 30A | CATHODE | 220A | Common Anode | 500μA | Fast Recovery =< 500ns, > 200mA (Io) | 500μA @ 120V | 1.28V @ 30A | -40°C~150°C | 120V | 30A | 500μA | 120V | 220A | |||||||||||||||||||||||||||||||||||||
| VS-1N1202A | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Chassis, Stud | Bulk | 2009 | Active | 1 (Unlimited) | 200°C | -65°C | 31.8mm | ROHS3 Compliant | Lead Free | 2 | DO-203AA, DO-4, Stud | Unknown | 11mm | Chassis, Stud Mount | 1N1202 | Standard | 12A | 1.35V | 240A | Single | DO-203AA | Standard Recovery >500ns, > 200mA (Io) | 2mA @ 200V | 1.35V @ 12A | -65°C~200°C | 200V | 12A | 2mA | 200V | 240A | 240A | 200V | 12A | 0.5 °C/W | 200V | |||||||||||||||||||||||||||||||||||||||||||||||
| VS-1N1204A | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Chassis, Stud | Bulk | 2008 | Active | 1 (Unlimited) | 200°C | -65°C | 31.8mm | ROHS3 Compliant | 2 | DO-203AA, DO-4, Stud | 11mm | Chassis, Stud Mount | 1N1204 | Standard | 12A | 1.35V | 240A | Single | DO-203AA | Standard Recovery >500ns, > 200mA (Io) | 1.5mA @ 400V | 1.35V @ 12A | -65°C~200°C | 400V | 12A | 1.5mA | 400V | 240A | 240A | 400V | 12A | 0.5 °C/W | 400V | |||||||||||||||||||||||||||||||||||||||||||||||||
| BYM13-60-E3/97 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -55°C | ROHS3 Compliant | Tin | No | 2 | LOW POWER LOSS, FREE WHEELING DIODE | DO-213AB, MELF | Surface Mount | 8541.10.00.80 | e3 | END | WRAP AROUND | 250 | 40 | BYM13-60 | 2 | Rectifier Diodes | SILICON | 1 | Schottky | 1A | 1A | 700mV | ISOLATED | 30A | Single | 500μA | Fast Recovery =< 500ns, > 200mA (Io) | 500μA @ 60V | 700mV @ 1A | -55°C~150°C | 60V | 1A | 500μA | 60V | 30A | 80pF @ 4V 1MHz | |||||||||||||||||||||||||||||||||||||
| SS35-E3/57T | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 11 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -55°C | 7.11mm | ROHS3 Compliant | Lead Free | 3A | No | 2 | FREE WHEELING DIODE, LOW POWER LOSS | DO-214AB, SMC | Unknown | 6.22mm | Surface Mount | 50V | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 40 | SS35 | 2 | Rectifier Diodes | SILICON | 1 | Schottky | EFFICIENCY | 1 | 3A | Standard | 3A | 750mV | CATHODE | 100A | Single | 500μA | Fast Recovery =< 500ns, > 200mA (Io) | 500μA @ 50V | 750mV @ 3A | -55°C~150°C | 50V | 3A | 500μA | 50V | 100A | 100A | ||||||||||||||||||||||||||||
| VS-300U60A | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Chassis, Stud | Bulk | 2007 | Active | 1 (Unlimited) | 1 | 200°C | -65°C | ROHS3 Compliant | Lead Free | 300A | No | 2 | DO-205AB, DO-9, Stud | Stud Mount | Nickel (Ni) | UPPER | HIGH CURRENT CABLE | O-MUPM-H1 | SILICON | 1 | Standard | GENERAL PURPOSE | 1 | 300A | 1.4V | CATHODE | 6.85kA | Single | 350mW | Standard Recovery >500ns, > 200mA (Io) | 40mA @ 600V | 1.4V @ 942A | -65°C~200°C | 600V | 300A | 40mA | 600V | 6.85kA | 0.08 °C/W | 600V | ||||||||||||||||||||||||||||||||||||||||||
| VS-10ETS12FP-M3 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2009 | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -40°C | 10.6mm | ROHS3 Compliant | 2 | UL APPROVED | TO-220-2 Full Pack | unknown | 8.9mm | 4.8mm | Through Hole | 8541.10.00.80 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | NOT APPLICABLE | NOT APPLICABLE | 10ETS12 | SILICON | 1 | Standard | GENERAL PURPOSE | 1 | 10A | 1.1V | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 50μA @ 1200V | 1.1V @ 10A | -40°C~150°C | 1.2kV | 10A | 50μA | 1.2kV | 160A | 170A | 1200V | |||||||||||||||||||||||||||||||||||||||
| FES16JT-E3/45 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount, Through Hole | Tube | yes | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -65°C | 10.54mm | ROHS3 Compliant | Lead Free | No | 2 | FREE WHEELING DIODE | TO-220-2 | Unknown | 15.32mm | 4.7mm | Through Hole | 16A | 8541.10.00.80 | e3 | Matte Tin (Sn) | FES16J | 3 | Rectifier Diodes | 600V | SILICON | 1 | Standard | EFFICIENCY | 1 | 16A | 1.5V | CATHODE | 250A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 10μA @ 600V | 1.5V @ 16A | -65°C~150°C | 600V | 16A | 10μA | 600V | 250A | 250A | 50 ns | 600V | 50 ns |