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    Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Lead Pitch Height Width Resistance Mounting Type Operating Temperature Voltage - Rated DC Technology Operating Mode JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Reference Standard Number of Elements Configuration JEDEC-95 Code Output Current Case Connection Halogen Free Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Drain to Source Resistance Supplier Device Package Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Isolation Voltage Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
    IRFB3206PBF IRFB3206PBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2008 HEXFET® Active 1 (Unlimited) 3 EAR99 10.668mm ROHS3 Compliant Lead Free Tin 210A No 3 TO-220-3 No SVHC 19.8mm 4.826mm 3MOhm Through Hole -55°C~175°C TJ 60V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 1 FET General Purpose Power 1 TO-220AB DRAIN Single 300W 19 ns 4V 300W Tc 50 ns 210A 175°C SWITCHING 55 ns SILICON N-Channel 3m Ω @ 75A, 10V 4V @ 150μA 6540pF @ 50V 170nC @ 10V 82ns 83 ns 20V 60V 120A Tc 840A 10V ±20V
    IPB020N10N5LFATMA1 IPB020N10N5LFATMA1 Infineon Technologies $0.00
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    		 download 13 Weeks Tape & Reel (TR) 2013 OptiMOS™-5 Active 1 (Unlimited) 150°C -55°C ROHS3 Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB 4.7mm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 1 313W 7 ns 1.8mOhm PG-TO263-3 313W Tc 29A 150°C 128 ns N-Channel 2mOhm @ 100A, 10V 4.1V @ 270μA 840pF @ 50V 195nC @ 10V 20V 100V 120A Tc 100V 10V ±20V
    IRLB8314PBF IRLB8314PBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2014 HEXFET® Active 1 (Unlimited) EAR99 ROHS3 Compliant 3 TO-220-3 No SVHC Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 1.7V 125W Tc 130A N-Channel 2.4m Ω @ 68A, 10V 2.2V @ 100μA 5050pF @ 15V 60nC @ 4.5V 130A Tc 30V 4.5V 10V ±20V
    IRF9Z24NPBF IRF9Z24NPBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 1997 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 10.5156mm ROHS3 Compliant Lead Free Tin -12A No 3 AVALANCHE RATED, HIGH RELIABILITY TO-220-3 No SVHC 2.54mm 15.24mm 4.69mm 175mOhm Through Hole -55°C~175°C TJ -55V MOSFET (Metal Oxide) ENHANCEMENT MODE Other Transistors 1 TO-220AB DRAIN Single 45W 13 ns -4V 45W Tc 71 ns -12A SWITCHING 23 ns SILICON P-Channel 175m Ω @ 7.2A, 10V 4V @ 250μA 350pF @ 25V 19nC @ 10V 55ns 37 ns 20V -55V -55V -4 V 12A Tc 55V 48A 96 mJ 10V ±20V
    IRFZ44NSTRLPBF IRFZ44NSTRLPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2000 HEXFET® Active 1 (Unlimited) 2 SMD/SMT EAR99 10.668mm ROHS3 Compliant Contains Lead, Lead Free Tin 49A No 3 AVALANCHE RATED, HIGH RELIABILITY TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 5.084mm 9.65mm 17.5mOhm Surface Mount -55°C~175°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 R-PSSO-G2 1 FET General Purpose Power 1 DRAIN Single 110W 12 ns 2V 3.8W Ta 94W Tc 95 ns 49A 175°C SWITCHING 44 ns SILICON N-Channel 17.5m Ω @ 25A, 10V 4V @ 250μA 1470pF @ 25V 63nC @ 10V 60ns 45 ns 20V 55V 55V 4 V 49A Tc 10V ±20V
    IRLIZ34NPBF IRLIZ34NPBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 1997 HEXFET® Active 1 (Unlimited) 3 EAR99 10.6172mm ROHS3 Compliant Contains Lead, Lead Free Tin 20A No 3 LOGIC LEVEL COMPATIBLE, AVALANCHE RATED TO-220-3 Full Pack No SVHC 9.8mm 4.826mm 46mOhm Through Hole -55°C~175°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB ISOLATED Single 31W 8.9 ns 2V 37W Tc 22A SWITCHING 2kV 29 ns SILICON N-Channel 35m Ω @ 12A, 10V 2V @ 250μA 880pF @ 25V 25nC @ 5V 10ns 21 ns 16V 55V 55V 2 V 22A Tc 4V 10V ±16V
    IPP055N03LGXKSA1 IPP055N03LGXKSA1 Infineon Technologies $0.00
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    		 download 13 Weeks Through Hole Tube 2008 OptiMOS™ Active 1 (Unlimited) 175°C -55°C ROHS3 Compliant Lead Free 3 TO-220-3 No SVHC Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) Halogen Free 68W 6.7 ns 30V 4.6mOhm PG-TO220-3 68W Tc 50A 25 ns N-Channel 5.5mOhm @ 30A, 10V 2.2V @ 250μA 3200pF @ 15V 31nC @ 10V 5.2ns 4 ns 20V 50A Tc 30V 3.2nF 4.5V 10V ±20V 5.5 mΩ
    IPAW60R360P7SXKSA1 IPAW60R360P7SXKSA1 Infineon Technologies $0.00
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    		 download 18 Weeks Tube 2014 CoolMOS™ P7 yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-220-3 Full Pack 18.57mm Through Hole -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED NO R-PSFM-T3 1 1 SINGLE WITH BUILT-IN DIODE TO-220AB ISOLATED 22W 8 ns 22W Tc 9A 150°C SWITCHING 0.36Ohm 42 ns SILICON N-Channel 360m Ω @ 2.7A, 10V 4V @ 140μA 555pF @ 400V 13nC @ 10V 20V 600V 9A Tc 650V 26A 27 mJ 10V ±30V
    BSC120N03MSGATMA1 BSC120N03MSGATMA1 Infineon Technologies $0.00
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    		 download 26 Weeks Surface Mount Tape & Reel (TR) 2002 OptiMOS™ no Active 1 (Unlimited) 5 EAR99 ROHS3 Compliant Contains Lead Tin No 8 AVALANCHE RATED 8-PowerTDFN Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 DUAL FLAT 8 R-PDSO-F5 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 28W 7.9 ns 30V 2.5W Ta 28W Tc 11A SWITCHING 7 ns SILICON N-Channel 12m Ω @ 30A, 10V 2V @ 250μA 1500pF @ 15V 20nC @ 10V 4.4ns 5 ns 16V 11A Ta 39A Tc 4.5V 10V ±20V
    BSC120N03LSGATMA1 BSC120N03LSGATMA1 Infineon Technologies $0.00
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    		 download 26 Weeks Surface Mount Tape & Reel (TR) 2013 OptiMOS™ no Active 1 (Unlimited) 5 EAR99 ROHS3 Compliant Contains Lead No 8 AVALANCHE RATED, LOGIC LEVEL COMPATIBLE 8-PowerTDFN Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) DUAL FLAT 8 R-PDSO-F5 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 28W 2.7 ns 30V 2.5W Ta 28W Tc 12A SWITCHING 12 ns SILICON N-Channel 12m Ω @ 30A, 10V 2.2V @ 250μA 1200pF @ 15V 15nC @ 10V 2.2ns 2.2 ns 20V 12A Ta 39A Tc 4.5V 10V ±20V
    IPN60R1K0CEATMA1 IPN60R1K0CEATMA1 Infineon Technologies $0.00
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    		 download 18 Weeks Tape & Reel (TR) 2013 CoolMOS™ CE Active 3 (168 Hours) 150°C -40°C ROHS3 Compliant 3 SOT-223-3 No SVHC 1.8mm Surface Mount -40°C~150°C TJ MOSFET (Metal Oxide) 1 5W 10 ns 3V 900mOhm PG-SOT223 5W Tc 6.8A 150°C 60 ns N-Channel 1Ohm @ 1.5A, 10V 3.5V @ 130μA 280pF @ 100V 13nC @ 10V 20V 600V 6.8A Tc 600V 10V ±20V
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    		 download 10 Weeks Surface Mount Tape & Reel (TR) 2002 SIPMOS® yes Active 1 (Unlimited) 4 EAR99 6.5mm ROHS3 Compliant Lead Free Tin 4 LOGIC LEVEL COMPATIBLE TO-261-4, TO-261AA No SVHC 1.5mm 3.5mm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 DUAL GULL WING NOT SPECIFIED NOT SPECIFIED 4 1 DRAIN Halogen Free Single 1.8W 5 ns -1.5V -250V 1.8W Ta 260mA 67 ns SILICON P-Channel 12 Ω @ 260mA, 10V 2V @ 130μA 104pF @ 25V 5.4nC @ 10V 6ns 33 ns 20V -250V 0.26A 260mA Ta 250V 2.8V 10V ±20V
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    		 download 18 Weeks Tape & Reel (TR) 2000 OptiMOS™ no Active 1 (Unlimited) 5 EAR99 ROHS3 Compliant AVALANCHE RATED 8-PowerTDFN not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) DUAL NO LEAD NOT SPECIFIED NOT SPECIFIED 8 YES S-PDSO-N5 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 2.1W Ta 25W Tc SWITCHING 0.015Ohm 30V SILICON N-Channel 11.5m Ω @ 20A, 10V 2V @ 250μA 1300pF @ 15V 17nC @ 10V 9A 9A Ta 35A Tc 30V 140A 9 mJ 4.5V 10V ±20V
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    		 download 18 Weeks Surface Mount Tape & Reel (TR) 2013 OptiMOS™ no Active 1 (Unlimited) 5 EAR99 ROHS3 Compliant Contains Lead 8 8-PowerTDFN not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) DUAL NO LEAD 8 S-PDSO-N5 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 4.5 ns 30V 2.1W Ta 25W Tc 36A SWITCHING 0.012Ohm 34V 16 ns SILICON N-Channel 12m Ω @ 20A, 10V 2V @ 250μA 1310pF @ 15V 17nC @ 10V 2.2ns 2 ns 20V 9A Ta 36A Tc 34V 144A 9 mJ 4.5V 10V ±20V
    IRFL024NTRPBF IRFL024NTRPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 1999 HEXFET® Active 1 (Unlimited) 4 SMD/SMT EAR99 6.6802mm ROHS3 Compliant Contains Lead, Lead Free 2.8A No 3 AVALANCHE RATED TO-261-4, TO-261AA No SVHC 1.4478mm 3.7mm 75mOhm Surface Mount -55°C~150°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING 260 30 R-PDSO-G4 1 DRAIN Single 2.1W 8.1 ns 4V 1W Ta 53 ns 2.8A SWITCHING 22.2 ns SILICON N-Channel 75m Ω @ 2.8A, 10V 4V @ 250μA 400pF @ 25V 18.3nC @ 10V 13.4ns 17.7 ns 20V 55V 55V 4 V 0.0028A 2.8A Ta 10V ±20V
    BSL606SNH6327XTSA1 BSL606SNH6327XTSA1 Infineon Technologies $0.00
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    		 download 10 Weeks Surface Mount Tape & Reel (TR) 2012 Automotive, AEC-Q101, OptiMOS™ Active 1 (Unlimited) 6 EAR99 ROHS3 Compliant Lead Free 6 AVALANCHE RATED SOT-23-6 Thin, TSOT-23-6 Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) DUAL GULL WING NOT SPECIFIED NOT SPECIFIED 1 SINGLE WITH BUILT-IN DIODE Halogen Free 2W 60V 2W Ta 4.5A SILICON N-Channel 60m Ω @ 4.5A, 10V 2.3V @ 15μA 657pF @ 25V 5.6nC @ 5V 20V 4.5A Ta 4.5V 10V ±20V
    IRFH7914TRPBF IRFH7914TRPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2008 HEXFET® Active 1 (Unlimited) 3 SMD/SMT EAR99 5.2324mm ROHS3 Compliant Lead Free No 8 8-PowerTDFN No SVHC 1.1684mm 6.1468mm 8.7MOhm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL 260 30 IRFH7914 R-PDSO-N3 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 3.1W 11 ns 1.8V 3.1W Ta 35A SWITCHING 12 ns SILICON N-Channel 8.7m Ω @ 14A, 10V 2.35V @ 25μA 1160pF @ 15V 12nC @ 4.5V 11ns 4.6 ns 20V 30V 30V 1.8 V 15A Ta 35A Tc 4.5V 10V ±20V
    BSZ180P03NS3EGATMA1 BSZ180P03NS3EGATMA1 Infineon Technologies $0.00
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    		 download 18 Weeks Surface Mount Tape & Reel (TR) 2011 OptiMOS™ no Active 1 (Unlimited) 5 EAR99 ROHS3 Compliant Contains Lead Tin 8 ESD PROTECTED 8-PowerTDFN No SVHC not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 DUAL FLAT NOT SPECIFIED NOT SPECIFIED 8 S-PDSO-F5 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 40W 11 ns -2.5V -30V 2.1W Ta 40W Tc 39.5A SWITCHING 20 ns SILICON P-Channel 18m Ω @ 20A, 10V 3.1V @ 48μA 2220pF @ 15V 30nC @ 10V 11ns 3 ns 25V 9A 9A Ta 39.5A Tc 30V 6V 10V ±25V
    IRFR120NTRLPBF IRFR120NTRLPBF Infineon Technologies $0.00
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    		 download 12 Weeks Tape & Reel (TR) 2004 HEXFET® Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 48W Tc SWITCHING 0.21Ohm 100V SILICON N-Channel 210m Ω @ 5.6A, 10V 4V @ 250μA 330pF @ 25V 25nC @ 10V 9.4A 9.4A Tc 100V 38A 91 mJ 10V ±20V
    IPN80R3K3P7ATMA1 IPN80R3K3P7ATMA1 Infineon Technologies $0.00
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    		 download 18 Weeks Tape & Reel (TR) 2014 CoolMOS™ P7 Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-261-3 not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) DUAL GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PDSO-G3 1 SINGLE WITH BUILT-IN DIODE DRAIN 6.1W Tc SWITCHING 800V SILICON N-Channel 3.3 Ω @ 590mA, 10V 3.5V @ 30μA 120pF @ 500V 5.8nC @ 10V 1.9A Tc 800V 10V ±20V
    IPD220N06L3GBTMA1 IPD220N06L3GBTMA1 Infineon Technologies $0.00
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    		 download 18 Weeks Tape & Reel (TR) 2011 OptiMOS™ no Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Tin 3 LOGIC LEVEL COMPATIBLE TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING NOT SPECIFIED NOT SPECIFIED 4 YES R-PSSO-G2 Not Qualified 1 TO-252AA DRAIN Single 36W 9 ns 36W Tc 30A SWITCHING 0.022Ohm 19 ns SILICON N-Channel 22m Ω @ 30A, 10V 2.2V @ 11μA 1600pF @ 30V 10nC @ 4.5V 3ns 20V 60V 30A Tc 120A 4.5V 10V ±20V
    IRF7205TRPBF IRF7205TRPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 1997 HEXFET® Active 1 (Unlimited) 8 EAR99 4.9784mm ROHS3 Compliant Lead Free -5.3A No 8 LOGIC LEVEL COMPATIBLE 8-SOIC (0.154, 3.90mm Width) No SVHC 1.4986mm 3.9878mm 70mOhm Surface Mount -55°C~150°C TJ -30V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING 260 30 Other Transistors 1 Single 2.5W 14 ns -3V 2.5W Tc 100 ns -4.6A SWITCHING 97 ns SILICON P-Channel 70m Ω @ 4.6A, 10V 3V @ 250μA 870pF @ 10V 40nC @ 10V 21ns 71 ns 20V -30V -30V -3 V 4.6A Ta 30V 4.5V 10V ±20V
    BSP322PH6327XTSA1 BSP322PH6327XTSA1 Infineon Technologies $0.00
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    		 download 10 Weeks Surface Mount Cut Tape (CT) 2012 SIPMOS® yes Active 1 (Unlimited) 4 EAR99 6.5mm ROHS3 Compliant Lead Free Tin 4 AVALANCHE RATED, LOGIC LEVEL COMPATIBLE TO-261-4, TO-261AA 1.6mm 3.5mm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 DUAL GULL WING NOT SPECIFIED NOT SPECIFIED 4 1 DRAIN Halogen Free Single 1.8W 4.6 ns -100V 1.8W Ta 1A 0.8Ohm 21.2 ns SILICON P-Channel 800m Ω @ 1A, 10V 1V @ 380μA 372pF @ 25V 16.5nC @ 10V 4.3ns 8.3 ns 20V 1A 1A Tc 100V 4.5V 10V ±20V
    IRF7204TRPBF IRF7204TRPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 1997 HEXFET® Active 1 (Unlimited) 8 4.9784mm ROHS3 Compliant Contains Lead, Lead Free -5.3A No 8 LOGIC LEVEL COMPATIBLE 8-SOIC (0.154, 3.90mm Width) No SVHC 1.4986mm 3.9878mm 60mOhm Surface Mount -55°C~150°C TJ -20V MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL GULL WING 1 5.3A Single 2.5W 14 ns -2.5V 2.5W Tc 100 ns -5.3A SWITCHING 100 ns SILICON P-Channel 60m Ω @ 5.3A, 10V 2.5V @ 250μA 860pF @ 10V 25nC @ 10V 26ns 68 ns 12V -20V -20V -2.5 V 5.3A Ta 20V 4.5V 10V ±12V
    BSC057N03MSGATMA1 BSC057N03MSGATMA1 Infineon Technologies $0.00
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    		 download 26 Weeks Tape & Reel (TR) 2013 OptiMOS™ no Active 1 (Unlimited) 5 EAR99 ROHS3 Compliant 8-PowerTDFN not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) DUAL FLAT NOT SPECIFIED NOT SPECIFIED 8 YES R-PDSO-F5 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 2.5W Ta 45W Tc SWITCHING 0.0072Ohm 30V SILICON N-Channel 5.7m Ω @ 30A, 10V 2V @ 250μA 3100pF @ 15V 40nC @ 10V 15A 15A Ta 71A Tc 30V 284A 25 mJ 4.5V 10V ±16V
    IPD30N03S4L14ATMA1 IPD30N03S4L14ATMA1 Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2003 OptiMOS™ Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Contains Lead 3 ULTRA LOW RESISTANCE TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 AEC-Q101 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 3 ns 30V 31W Tc 30A 12 ns SILICON N-Channel 13.6m Ω @ 30A, 10V 2.2V @ 10μA 980pF @ 25V 14nC @ 10V 2ns 16V 30A Tc 120A 16 mJ 4.5V 10V ±16V
    IPP80P03P4L04AKSA1 IPP80P03P4L04AKSA1 Infineon Technologies $0.00
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    		 download 14 Weeks Through Hole Tube 2008 OptiMOS™ Not For New Designs 1 (Unlimited) 3 EAR99 ROHS3 Compliant Contains Lead No 3 LOGIC LEVEL COMPATIBLE TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE 1 SINGLE WITH BUILT-IN DIODE TO-220AB Halogen Free 17 ns -30V 137W Tc 80A 0.007Ohm 140 ns SILICON P-Channel 4.4m Ω @ 80A, 10V 2V @ 253μA 11300pF @ 25V 160nC @ 10V 11ns 40 ns 5V 80A Tc 30V 410 mJ 4.5V 10V +5V, -16V
    IRFP3710PBF IRFP3710PBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Bulk 1998 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 15.875mm ROHS3 Compliant Contains Lead, Lead Free 57A No 3 AVALANCHE RATED TO-247-3 No SVHC 24.99mm 5.3mm Through Hole -55°C~175°C TJ 100V MOSFET (Metal Oxide) ENHANCEMENT MODE 1 1 TO-247AC DRAIN Single 180W 14 ns 2V 200W Tc 320 ns 57A 175°C SWITCHING 0.025Ohm 58 ns SILICON N-Channel 25m Ω @ 28A, 10V 4V @ 250μA 3000pF @ 25V 190nC @ 10V 59ns 48 ns 20V 100V 100V 4 V 57A Tc 10V ±20V
    IRFB5620PBF IRFB5620PBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2007 Active 1 (Unlimited) Through Hole 175°C -55°C 10.668mm ROHS3 Compliant Lead Free Tin No 3 TO-220-3 No SVHC 9.02mm 4.826mm 72.5MOhm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) 1 Single 144W 8.6 ns 5V 72.5mOhm TO-220AB 144W Tc 25A 17.1 ns N-Channel 72.5mOhm @ 15A, 10V 5V @ 100μA 1710pF @ 50V 38nC @ 10V 14.6ns 9.9 ns 20V 200V 200V 5 V 25A Tc 200V 1.71nF 10V ±20V 72.5 mΩ
    IRFP9140NPBF IRFP9140NPBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Bulk 1998 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 15.875mm ROHS3 Compliant Contains Lead, Lead Free -23A No 3 AVALANCHE RATED, HIGH RELIABILITY TO-247-3 No SVHC 20.3mm 5.3mm 117mOhm Through Hole -55°C~175°C TJ -100V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN OVER NICKEL 250 30 Other Transistors 1 TO-247AC DRAIN Single 120W 15 ns -4V 140W Tc 220 ns -23A SWITCHING 51 ns SILICON P-Channel 117m Ω @ 13A, 10V 4V @ 250μA 1300pF @ 25V 97nC @ 10V 67ns 20V -100V -100V -4 V 23A Tc 100V 76A 10V ±20V