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    Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Lead Pitch Height Width Resistance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode Manufacturer Package Identifier Lead Length JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Number of Elements Configuration JEDEC-95 Code Case Connection Halogen Free Row Spacing Polarity/Channel Type Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Drain to Source Resistance Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min FET Technology Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage FET Feature Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Feedback Cap-Max (Crss) Drive Voltage (Max Rds On,Min Rds On) Vgs (Max)
    BSZ065N06LS5ATMA1 BSZ065N06LS5ATMA1 Infineon Technologies $0.00
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    		 download 18 Weeks Tape & Reel (TR) 2013 yes Active 1 (Unlimited) EAR99 150°C -55°C ROHS3 Compliant 8-PowerTDFN not_compliant 1.1mm Surface Mount e3 Tin (Sn) 1 2.1W 5 ns 5.4mOhm 14A 150°C 14 ns 20V 60V 60V
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2004 HEXFET® Active 1 (Unlimited) 2 EAR99 6.7056mm ROHS3 Compliant Contains Lead, Lead Free 93A No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 2.26mm 6.22mm 5.7MOhm Surface Mount -55°C~175°C TJ 20V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 1 TO-252AA DRAIN Single 79W 12 ns 79W Tc 93A SWITCHING 15 ns SILICON N-Channel 5.7m Ω @ 15A, 10V 2.45V @ 250μA 2160pF @ 10V 27nC @ 4.5V 13ns 5.2 ns 20V 20V 93A Tc 4.5V 10V ±20V
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2009 OptiMOS™ Not For New Designs 1 (Unlimited) 2 EAR99 ROHS3 Compliant Contains Lead 3 TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 11 ns 40V 63W Tc 50A 0.009Ohm 16 ns SILICON N-Channel 9m Ω @ 50A, 10V 4V @ 28μA 1750pF @ 25V 26nC @ 10V 7ns 6 ns 20V 50A Tc 200A 140 mJ 10V ±20V
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    		 download 18 Weeks 2013 yes Active 3 (168 Hours) 3 EAR99 150°C -40°C ROHS3 Compliant Lead Free ENHANCEMENT MODE SINGLE THROUGH-HOLE NOT SPECIFIED NOT SPECIFIED NO R-PSIP-T3 1 SINGLE WITH BUILT-IN DIODE TO-262AA DRAIN Halogen Free N-CHANNEL 700V SWITCHING 0.95Ohm METAL-OXIDE SEMICONDUCTOR 700V 12A 50 mJ
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    		 download 12 Weeks Tape & Reel (TR) 2004 HEXFET® Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 140W Tc SWITCHING 0.0045Ohm 30V SILICON N-Channel 4.5m Ω @ 15A, 10V 2.3V @ 250μA 4010pF @ 15V 50nC @ 4.5V 30A 140A Tc 30V 560A 530 mJ 4.5V 10V ±20V
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    		 download 18 Weeks Surface Mount Tape & Reel (TR) 2010 OptiMOS™ yes Active 3 (168 Hours) 8 EAR99 ROHS3 Compliant Lead Free Tin 8 LOGIC LEVEL COMPATIBLE 8-SOIC (0.154, 3.90mm Width) Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 DUAL GULL WING NOT SPECIFIED NOT SPECIFIED 8 Not Qualified 1 SINGLE WITH BUILT-IN DIODE Halogen Free 1.6W -20V 1.6W Ta 7A SILICON P-Channel 21m Ω @ 8.9A, 4.5V 1.2V @ 100μA 3750pF @ 15V 39nC @ 4.5V 55ns 12V 7A Ta 20V 35.6A 97 mJ 2.5V 4.5V ±12V
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    		 download 14 Weeks Surface Mount Tape & Reel (TR) 2004 HEXFET® Not For New Designs 1 (Unlimited) 2 EAR99 6.7056mm ROHS3 Compliant Lead Free 110A No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 2.3876mm 6.22mm Surface Mount -55°C~150°C TJ 20V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 120W 12 ns 2.5W Ta 120W Tc 110A SWITCHING 0.0065Ohm 17 ns SILICON N-Channel 6.5m Ω @ 15A, 10V 3V @ 250μA 2980pF @ 10V 44nC @ 4.5V 220ns 12 ns 20V 20V 100A Tc 440A 460 mJ 4.5V 10V ±20V
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    		 download Surface Mount Tape & Reel (TR) 2013 HEXFET®, StrongIRFET™ Not For New Designs 1 (Unlimited) EAR99 ROHS3 Compliant Lead Free TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) e3 Matte Tin (Sn) - with Nickel (Ni) barrier 140W Tc 90A N-Channel 4.8m Ω @ 66A, 10V 3.7V @ 100μA 4360pF @ 25V 130nC @ 10V 90A Tc 60V 6V 10V ±20V
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    		 download 18 Weeks Surface Mount Tape & Reel (TR) 2013 OptiMOS™ yes Active 1 (Unlimited) 3 ROHS3 Compliant Contains Lead 8 8-PowerTDFN not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL NO LEAD NOT SPECIFIED NOT SPECIFIED S-PDSO-N3 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 30V 2.1W Ta 43W Tc 40A SWITCHING 0.0033Ohm SILICON N-Channel 2.8m Ω @ 20A, 10V 2V @ 250μA 1600pF @ 15V 26nC @ 10V 22A 22A Ta 40A Tc 160A 30 mJ 4.5V 10V ±20V
    IPD30N06S223ATMA2 IPD30N06S223ATMA2 Infineon Technologies $0.00
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    		 download 10 Weeks Surface Mount Tape & Reel (TR) 2006 OptiMOS™ yes Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Contains Lead No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 10 ns 55V 100W Tc 30A 24 ns SILICON N-Channel 23m Ω @ 21A, 10V 4V @ 50μA 901pF @ 25V 32nC @ 10V 23ns 18 ns 20V 30A Tc 120A 150 mJ 10V ±20V
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    		 download 10 Weeks Surface Mount Tape & Reel (TR) 2006 OptiMOS™ Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Contains Lead 3 LOGIC LEVEL COMPATIBLE TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 7 ns 30V 100W Tc 30A SWITCHING 0.0146Ohm 29 ns SILICON N-Channel 10m Ω @ 30A, 10V 2V @ 50μA 1200pF @ 25V 42nC @ 10V 21ns 10 ns 20V 30A Tc 120A 150 mJ 4.5V 10V ±20V
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2012 HEXFET® Active 1 (Unlimited) 3 EAR99 3.04mm ROHS3 Compliant Lead Free 3 TO-236-3, SC-59, SOT-23-3 No SVHC 1.12mm 1.4mm 80MOhm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE Micro3 e3 Matte Tin (Sn) DUAL GULL WING NOT SPECIFIED NOT SPECIFIED 1 FET General Purpose Power Not Qualified 1 Single 1.3W 3.3 ns 800mV 1.3W Ta 13 ns 3.4A 150°C SWITCHING 12 ns SILICON N-Channel 63m Ω @ 3.4A, 4.5V 1.1V @ 10μA 270pF @ 24V 2.9nC @ 4.5V 4ns 4.9 ns 12V 30V 800 mV 3.4A Ta 2.5V 4.5V ±12V
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    		 download Surface Mount Tape & Reel (TR) 1999 FETKY™ Obsolete 1 (Unlimited) EAR99 3.048mm RoHS Compliant No 8 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) 910μm 3.048mm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) Other Transistors 1 Single 800mW 9.7 ns 1.25W Ta -2A 19 ns P-Channel 200m Ω @ 1.2A, 10V 1V @ 250μA 180pF @ 25V 11nC @ 10V 12ns 9.3 ns 20V -30V Schottky Diode (Isolated) 2A 2A Ta 30V 4.5V 10V ±20V
    IPD075N03LGATMA1 IPD075N03LGATMA1 Infineon Technologies $0.00
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    		 download 18 Weeks Surface Mount Tape & Reel (TR) 1999 OptiMOS™ no Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Contains Lead 3 AVALANCHE RATED, LOGIC LEVEL COMPATIBLE TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) GULL WING NOT SPECIFIED NOT SPECIFIED 4 R-PSSO-G2 Not Qualified 1 DRAIN Halogen Free Single 47W 30V 47W Tc 50A SWITCHING SILICON N-Channel 7.5m Ω @ 30A, 10V 2.2V @ 250μA 1900pF @ 15V 18nC @ 10V 3.6ns 2.8 ns 20V 30V 50A Tc 50 mJ 4.5V 10V ±20V
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    		 download 18 Weeks Tube StrongIRFET™ Active 1 (Unlimited) ROHS3 Compliant TO-247-3 Through Hole -55°C~175°C MOSFET (Metal Oxide) 556W Tc N-Channel 2.7m Ω @ 100A, 10V 4.6V @ 265μA 12000pF @ 75V 200nC @ 10V 203A 150V 10V ±20V
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    		 download 18 Weeks Through Hole Tube 2008 CoolMOS™ P6 yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free 3 TO-247-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 1 SINGLE WITH BUILT-IN DIODE 29 ns 600V 481W Tc 77.5A SWITCHING 0.041Ohm 90 ns SILICON N-Channel 41m Ω @ 35.5A, 10V 4.5V @ 2.96mA 8180pF @ 100V 170nC @ 10V 27ns 5 ns 30V 77.5A Tc 267A 1954 mJ 10V ±20V
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    		 download 13 Weeks Tape & Reel (TR) 2013 OptiMOS™-5 Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING YES R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE DRAIN 313W Tc SWITCHING 0.0048Ohm 150V SILICON N-Channel 4.8m Ω @ 100A, 10V 4.9V @ 255μA 380pF @ 75V 84nC @ 10V 120A 120A 150V 480A 30 mJ 23 pF 10V ±20V
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    		 download 12 Weeks Surface Mount, Through Hole Tape & Reel (TR) 1997 HEXFET® Active 1 (Unlimited) 8 4.9784mm ROHS3 Compliant Lead Free Tin 8.5A No 8 LOGIC LEVEL COMPATIBLE 8-SOIC (0.154, 3.90mm Width) No SVHC 1.4986mm 3.9878mm 22mOhm Surface Mount -55°C~150°C TJ 30V MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL GULL WING 1 6.3 mm Single 2.5W 10 ns 1V 2.5W Ta 78 ns 8.5A 42 ns SILICON N-Channel 22m Ω @ 4A, 10V 1V @ 250μA 1200pF @ 25V 57nC @ 10V 37ns 40 ns 20V 30V 30V 1 V 6.7A 8.5A Ta 4.5V 10V ±20V
    IPD70R950CEAUMA1 IPD70R950CEAUMA1 Infineon Technologies $0.00
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    		 download 18 Weeks Surface Mount Tape & Reel (TR) 2013 CoolMOS™ yes Active 3 (168 Hours) 2 EAR99 ROHS3 Compliant Contains Lead TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 700V 68W Tc 7.4A SWITCHING 0.95Ohm SILICON N-Channel 950m Ω @ 1.5A, 10V 3.5V @ 150μA 328pF @ 100V 15.3nC @ 10V Super Junction 7.4A Tc 12A 50 mJ 10V ±20V
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    		 download 12 Weeks Tape & Reel (TR) 1999 HEXFET®, StrongIRFET™ Active 1 (Unlimited) EAR99 ROHS3 Compliant Lead Free TO-252-3, DPak (2 Leads + Tab), SC-63 5.1mOhm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 83W Tc 56A N-Channel 5.1m Ω @ 55A, 10V 3.9V @ 50μA 2110pF @ 25V 68nC @ 10V 56A Tc 40V 6V 10V ±20V
    IPB054N06N3GATMA1 IPB054N06N3GATMA1 Infineon Technologies $0.00
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    		 download 13 Weeks Surface Mount Tape & Reel (TR) 2008 OptiMOS™ no Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Contains Lead 3 LOGIC LEVEL COMPATIBLE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 115W 24 ns 60V 115W Tc 80A SWITCHING 0.0057Ohm 32 ns SILICON N-Channel 5.4m Ω @ 80A, 10V 4V @ 58μA 6600pF @ 30V 82nC @ 10V 68ns 9 ns 20V 80A Tc 77 mJ 10V ±20V
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    		 download 12 Weeks Through Hole Tube 2013 HEXFET®, StrongIRFET™ Active 1 (Unlimited) EAR99 ROHS3 Compliant Lead Free 3 TO-262-3 Long Leads, I2Pak, TO-262AA Through Hole 2.084002g -55°C~175°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 1 Single 11 ns 125W Tc 76A 51 ns N-Channel 8.4m Ω @ 46A, 10V 3.7V @ 100μA 4020pF @ 25V 109nC @ 10V 48ns 39 ns 20V 76A Tc 75V 6V 10V ±20V
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    		 download 26 Weeks Surface Mount Tape & Reel (TR) 2015 OptiMOS™ yes Active 1 (Unlimited) 5 ROHS3 Compliant Contains Lead 8 8-PowerTDFN not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL FLAT NOT SPECIFIED NOT SPECIFIED R-PDSO-F5 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 30V 2.5W Ta 36W Tc 88A SWITCHING 0.0037Ohm SILICON N-Channel 3m Ω @ 30A, 10V 2V @ 250μA 1300pF @ 15V 20nC @ 10V 22A 22A Ta 88A Tc 352A 10 mJ 4.5V 10V ±20V
    IPD80R450P7ATMA1 IPD80R450P7ATMA1 Infineon Technologies $0.00
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    		 download 18 Weeks Surface Mount Tape & Reel (TR) 2013 CoolMOS™ yes Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 73W Tc 11A SWITCHING 0.45Ohm 800V SILICON N-Channel 450m Ω @ 4.5A, 10V 3.5V @ 220μA 770pF @ 500V 24nC @ 10V Super Junction 11A Tc 800V 29A 29 mJ 10V ±20V
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    		 download 12 Weeks Through Hole Tube 1998 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 6.7056mm ROHS3 Compliant Lead Free 16A 3 AVALANCHE RATED TO-251-3 Short Leads, IPak, TO-251AA No SVHC 2.28mm 6.22mm 2.3876mm Through Hole -55°C~175°C TJ 100V MOSFET (Metal Oxide) ENHANCEMENT MODE 9.65mm e3 Matte Tin (Sn) - with Nickel (Ni) barrier 260 30 FET General Purpose Power Not Qualified 1 DRAIN Single 52W 6.4 ns 4V 79W Tc 16A SWITCHING 0.115Ohm 37 ns SILICON N-Channel 115m Ω @ 10A, 10V 4V @ 250μA 640pF @ 25V 44nC @ 10V 27ns 25 ns 20V 100V 100V 4 V 15A 16A Tc 60A 150 mJ 10V ±20V
    IPS70R360P7SAKMA1 IPS70R360P7SAKMA1 Infineon Technologies $0.00
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    		 download 18 Weeks Tube 2014 CoolMOS™ P7 yes Active 1 (Unlimited) EAR99 ROHS3 Compliant TO-251-3 Short Leads, IPak, TO-251AA Through Hole -40°C~150°C TJ MOSFET (Metal Oxide) 59.5W Tc N-Channel 360m Ω @ 3A, 10V 3.5V @ 150μA 517pF @ 400V 16.4nC @ 10V 12.5A Tc 700V 10V ±16V
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    		 download 18 Weeks Through Hole Tube 2008 CoolMOS™ CE yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free 3 TO-220-3 Full Pack Through Hole 2.299997g -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) NOT SPECIFIED NOT SPECIFIED 1 1 TO-220AB ISOLATED Halogen Free Single 11 ns 600V 30W Tc 9.1A SWITCHING 0.46Ohm 70 ns SILICON N-Channel 460m Ω @ 3.4A, 10V 3.5V @ 280μA 620pF @ 100V 28nC @ 10V 9ns 10 ns 20V 9.1A Tc 26A 10V ±20V
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    		 download 14 Weeks Through Hole Tube 2002 HEXFET® Not For New Designs 1 (Unlimited) 3 EAR99 10.668mm ROHS3 Compliant Lead Free 110A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE TO-262-3 Long Leads, I2Pak, TO-262AA No SVHC 9.65mm 4.826mm Through Hole -55°C~175°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE 260 30 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 200W 14 ns 4V 200W Tc 110A SWITCHING 0.008Ohm 50 ns SILICON N-Channel 8m Ω @ 62A, 10V 4V @ 250μA 3247pF @ 25V 146nC @ 10V 101ns 65 ns 20V 55V 75A 110A Tc 264 mJ 10V ±20V
    IPAN70R600P7SXKSA1 IPAN70R600P7SXKSA1 Infineon Technologies $0.00
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    		 download 18 Weeks Tube 2014 CoolMOS™ P7 Active Not Applicable 3 EAR99 ROHS3 Compliant TO-220-3 Full Pack Through Hole -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED NO R-PSFM-T3 1 SINGLE WITH BUILT-IN DIODE TO-220AB ISOLATED 24.9W Tc SWITCHING 0.6Ohm 700V SILICON N-Channel 600m Ω @ 1.8A, 10V 3.5V @ 90μA 364pF @ 400V 10.5nC @ 10V 8.5A Tc 700V 20.5A 10V ±16V
    IPP16CN10NGXKSA1 IPP16CN10NGXKSA1 Infineon Technologies $0.00
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    		 download 13 Weeks Through Hole Tube 2008 OptiMOS™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free 53A 3 TO-220-3 No SVHC Through Hole -55°C~175°C TJ 100V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB Halogen Free 100W 15 ns 100V 100W Tc 53A SWITCHING 0.0165Ohm 27 ns SILICON N-Channel 16.5m Ω @ 53A, 10V 4V @ 61μA 3220pF @ 50V 48nC @ 10V 14ns 7 ns 20V 53A Tc 212A 107 mJ 10V ±20V