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    Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Lead Pitch Height Width Resistance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode Manufacturer Package Identifier JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count JESD-30 Code Number of Channels Subcategory Qualification Status Reference Standard Number of Elements Configuration JEDEC-95 Code Case Connection Halogen Free Row Spacing Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Drain to Source Resistance Supplier Device Package Reverse Recovery Time Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage FET Feature Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
    IRF2807PBF IRF2807PBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount, Through Hole Tube 2001 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 10.54mm ROHS3 Compliant Contains Lead, Lead Free Tin 82A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-220-3 No SVHC 2.54mm 8.77mm 4.69mm 13mOhm Through Hole -55°C~175°C TJ 75V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 250 30 FET General Purpose Power 1 TO-220AB DRAIN Single 230W 13 ns 4V 230W Tc 150 ns 82A SWITCHING 49 ns SILICON N-Channel 13m Ω @ 43A, 10V 4V @ 250μA 3820pF @ 25V 160nC @ 10V 64ns 48 ns 20V 75V 75V 4 V 75A 82A Tc 280A 10V ±20V
    IRFP048NPBF IRFP048NPBF Infineon Technologies $0.00
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    		 download 10 Weeks Through Hole Bulk 1997 HEXFET® Obsolete 1 (Unlimited) 3 EAR99 15.875mm ROHS3 Compliant Contains Lead, Lead Free 36A No 3 AVALANCHE RATED, HIGH RELIABILITY TO-247-3 No SVHC 5.45mm 20.3mm 5.3mm Through Hole -55°C~175°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-247AC DRAIN Single 130W 11 ns 4V 140W Tc 140 ns 64A SWITCHING 32 ns SILICON N-Channel 16m Ω @ 37A, 10V 4V @ 250μA 1900pF @ 25V 89nC @ 10V 78ns 48 ns 20V 55V 55V 4 V 62A 64A Tc 270 mJ 10V ±20V
    IPP50N10S3L16AKSA1 IPP50N10S3L16AKSA1 Infineon Technologies $0.00
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    		 download 14 Weeks Through Hole Tube 2008 OptiMOS™ Obsolete 1 (Unlimited) 3 EAR99 ROHS3 Compliant Contains Lead 3 TO-220-3 not_compliant Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED AEC-Q101 1 SINGLE WITH BUILT-IN DIODE TO-220AB Halogen Free 10 ns 100V 100W Tc 50A 0.0209Ohm 28 ns SILICON N-Channel 15.7m Ω @ 50A, 10V 2.4V @ 60μA 4180pF @ 25V 64nC @ 10V 5ns 20V 50A Tc 200A 4.5V 10V ±20V
    SPU07N60C3BKMA1 SPU07N60C3BKMA1 Infineon Technologies $0.00
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    		 download Through Hole Tube 2005 CoolMOS™ no Last Time Buy 1 (Unlimited) 3 ROHS3 Compliant Contains Lead 7.3A 3 AVALANCHE RATED TO-251-3 Short Leads, IPak, TO-251AA not_compliant Through Hole -55°C~150°C TJ 650V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE Not Halogen Free 83W 6 ns 600V 83W Tc 7.3A SWITCHING 0.6Ohm 60 ns SILICON N-Channel 600m Ω @ 4.6A, 10V 3.9V @ 350μA 790pF @ 25V 27nC @ 10V 3.5ns 7 ns 20V 7.3A Tc 21.9A 10V ±20V
    IRFB7540PBF IRFB7540PBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2008 HEXFET®, StrongIRFET™ Active 1 (Unlimited) 3 EAR99 10.67mm ROHS3 Compliant Lead Free 3 TO-220-3 No SVHC 16.51mm 4.83mm Through Hole 6.000006g -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE NOT SPECIFIED NOT SPECIFIED 1 1 TO-220AB Single 12 ns 3.7V 160W Tc 110A SWITCHING 60V 58 ns SILICON N-Channel 5.1m Ω @ 65A, 10V 3.7V @ 100μA 4555pF @ 25V 130nC @ 10V 76ns 56 ns 20V 110A Tc 60V 6V 10V ±20V
    IPI80N04S403AKSA1 IPI80N04S403AKSA1 Infineon Technologies $0.00
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    		 download 16 Weeks Through Hole Tube 2010 OptiMOS™ Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Contains Lead 3 TO-262-3 Long Leads, I2Pak, TO-262AA not_compliant Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 1 SINGLE WITH BUILT-IN DIODE Halogen Free 14 ns 40V 94W Tc 80A SILICON N-Channel 3.7m Ω @ 80A, 10V 4V @ 53μA 5260pF @ 25V 66nC @ 10V 12ns 16 ns 20V 80A Tc 200 mJ 10V ±20V
    IPA60R125P6XKSA1 IPA60R125P6XKSA1 Infineon Technologies $0.00
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    		 download 18 Weeks Through Hole Tube 2008 CoolMOS™ P6 yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free 3 TO-220-3 Full Pack Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 1 SINGLE WITH BUILT-IN DIODE TO-220AB ISOLATED Halogen Free 14 ns 600V 34W Tc 30A SWITCHING 0.125Ohm 44 ns SILICON N-Channel 125m Ω @ 11.6A, 10V 4.5V @ 960μA 2660pF @ 100V 56nC @ 10V 9ns 5 ns 30V 30A Tc 87A 10V ±20V
    IPN50R800CEATMA1 IPN50R800CEATMA1 Infineon Technologies $0.00
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    		 download 18 Weeks Tape & Reel (TR) 2012 CoolMOS™ CE yes Active 1 (Unlimited) EAR99 ROHS3 Compliant 3 TO-261-3 No SVHC not_compliant Surface Mount -40°C~150°C TJ MOSFET (Metal Oxide) e3 Tin (Sn) 3V 5W Tc 7.6A N-Channel 800m Ω @ 1.5A, 13V 3.5V @ 130μA 280pF @ 100V 12.4nC @ 10V 7.6A Tc 500V 13V ±20V
    IPD70R900P7SAUMA1 IPD70R900P7SAUMA1 Infineon Technologies $0.00
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    		 download 18 Weeks Tape & Reel (TR) 2014 CoolMOS™ P7 yes Active 3 (168 Hours) EAR99 ROHS3 Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant 2.55mm Surface Mount -40°C~150°C TJ MOSFET (Metal Oxide) e3 Tin (Sn) 1 30.5W 12 ns 30.5W Tc 6A 150°C 58 ns N-Channel 900m Ω @ 1.1A, 10V 3.5V @ 60μA 211pF @ 400V 6.8nC @ 10V 16V 700V 6A Tc 10V ±16V
    BSP324H6327XTSA1 BSP324H6327XTSA1 Infineon Technologies $0.00
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    		 download 10 Weeks Surface Mount Cut Tape (CT) 2008 SIPMOS® Active 1 (Unlimited) SMD/SMT 150°C -55°C 6.5mm ROHS3 Compliant Lead Free Tin 3 TO-261-4, TO-261AA No SVHC 1.6mm 6.7mm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 1 Halogen Free Single 1.7W 4.6 ns 1.9V 400V 13.6Ohm PG-SOT223-4 1.8W Ta 170mA 17 ns N-Channel 25Ohm @ 170mA, 10V 2.3V @ 94μA 154pF @ 25V 5.9nC @ 10V 4.4ns 68 ns 20V 400V 1.9 V 170mA Ta 400V 154pF 4.5V 10V ±20V 25 Ω
    BSP318SH6327XTSA1 BSP318SH6327XTSA1 Infineon Technologies $0.00
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    		 download 10 Weeks Surface Mount Tape & Reel (TR) 1999 SIPMOS® yes Active 1 (Unlimited) 4 SMD/SMT EAR99 6.5mm ROHS3 Compliant Lead Free Tin No 4 AVALANCHE RATED, LOGIC LEVEL COMPATIBLE TO-261-4, TO-261AA No SVHC 1.8mm 3.5mm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE PG-SOT223-4 e3 DUAL GULL WING 4 1 1 DRAIN Halogen Free Single 1.8W 12 ns 1.6V 60V 1.8W Ta 75 ns 2.6A 20 ns SILICON N-Channel 90m Ω @ 2.6A, 10V 2V @ 20μA 380pF @ 25V 20nC @ 10V 15ns 15 ns 20V 60V 60V 1.6 V 2.6A Tj 60 mJ 4.5V 10V ±20V
    BSP373NH6327XTSA1 BSP373NH6327XTSA1 Infineon Technologies $0.00
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    		 download 10 Weeks Surface Mount Tape & Reel (TR) 2007 OptiMOS™ Active 1 (Unlimited) 4 EAR99 ROHS3 Compliant Lead Free Tin 4 AVALANCHE RATED TO-261-4, TO-261AA No SVHC Surface Mount 250.212891mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 DUAL GULL WING NOT SPECIFIED NOT SPECIFIED 1 DRAIN Halogen Free Single 1.8W 4.6 ns 3V 100V 1.8W Ta 1.8A 21.9 ns SILICON N-Channel 240m Ω @ 1.8A, 10V 4V @ 218μA 265pF @ 25V 9.3nC @ 10V 5.9ns 13.5 ns 20V 1.8A Ta 10V ±20V
    IRF8113TRPBF IRF8113TRPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2005 HEXFET® Active 1 (Unlimited) SMD/SMT EAR99 4.9784mm ROHS3 Compliant Contains Lead, Lead Free 16.6A No 8 8-SOIC (0.154, 3.90mm Width) No SVHC 1.4986mm 3.9878mm 5.6MOhm Surface Mount -55°C~150°C TJ 30V MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 Single 6.3 mm 2.5W 13 ns 2.2V 2.5W Ta 17.2A 17 ns N-Channel 5.6m Ω @ 17.2A, 10V 2.2V @ 250μA 2910pF @ 15V 36nC @ 4.5V 8.9ns 3.5 ns 20V 30V 30V 2.2 V 17.2A Ta 4.5V 10V ±20V
    SI4435DYTRPBF SI4435DYTRPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 1999 HEXFET® Active 1 (Unlimited) 8 SMD/SMT EAR99 4.9784mm ROHS3 Compliant Contains Lead, Lead Free Tin -8A No 8 ULTRA LOW RESISTANCE 8-SOIC (0.154, 3.90mm Width) No SVHC 1.75mm 3.9878mm 20mOhm Surface Mount -55°C~150°C TJ -30V MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL GULL WING 1 1 6.3 mm Single 2.5W 16 ns -1V 2.5W Ta 51 ns -8A 150°C SWITCHING 130 ns SILICON P-Channel 20m Ω @ 8A, 10V 1V @ 250μA 2320pF @ 15V 60nC @ 10V 17ns 31 ns 20V -30V -30V -1 V 8A 8A Tc 30V 50A 4.5V 10V ±20V
    IRFHM830TRPBF IRFHM830TRPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2010 HEXFET® Active 1 (Unlimited) 5 EAR99 3.3mm ROHS3 Compliant Lead Free No 8 8-VQFN Exposed Pad No SVHC 1mm 3.3mm 6MOhm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL S-PDSO-N5 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 2.7W 12 ns 1.8V 2.7W Ta 37W Tc 21A SWITCHING 13 ns SILICON N-Channel 3.8m Ω @ 20A, 10V 2.35V @ 50μA 2155pF @ 25V 31nC @ 10V 25ns 9.2 ns 20V 30V 1.8 V 40A 21A Ta 40A Tc 4.5V 10V ±20V
    IRF7476TRPBF IRF7476TRPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2006 HEXFET® Not For New Designs 1 (Unlimited) 8 EAR99 4.9784mm ROHS3 Compliant No 8 8-SOIC (0.154, 3.90mm Width) 1.4986mm 3.9878mm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL GULL WING 1 Single 2.5W 11 ns 2.5W Ta 15A SWITCHING 19 ns SILICON N-Channel 8m Ω @ 15A, 4.5V 1.9V @ 250μA 2550pF @ 6V 40nC @ 4.5V 29ns 8.3 ns 12V 12V 15A Ta 2.8V 4.5V ±12V
    IPD50R380CEAUMA1 IPD50R380CEAUMA1 Infineon Technologies $0.00
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    		 download 18 Weeks Surface Mount Tape & Reel (TR) 2008 CoolMOS™ yes Active 3 (168 Hours) 2 EAR99 ROHS3 Compliant Contains Lead 3 TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant 2.55mm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 1 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 98W 7.2 ns 3V 500V 98W Tc 14.1A 150°C SWITCHING 35 ns SILICON N-Channel 380m Ω @ 3.2A, 13V 3.5V @ 260μA 584pF @ 100V 24.8nC @ 10V 20V 500V Super Junction 14.1A Tc 13V ±20V
    BSC079N03SG BSC079N03SG Infineon Technologies $0.00
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    		 download Surface Mount Tape & Reel (TR) 2005 OptiMOS™ Obsolete 1 (Unlimited) 5 EAR99 RoHS Compliant Lead Free 40A 8 AVALANCHE RATED, LOGIC LEVEL COMPATIBLE 8-PowerTDFN Surface Mount -55°C~150°C TJ 30V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN DUAL FLAT 260 NOT SPECIFIED 8 R-PDSO-F5 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 2.8W 2.8W Ta 60W Tc 40A SWITCHING 0.0116Ohm 21 ns SILICON N-Channel 7.9m Ω @ 40A, 10V 2V @ 30μA 2230pF @ 15V 17nC @ 5V 4.2ns 3.4 ns 20V 30V 14.6A 14.6A Ta 40A Tc 160A 120 mJ 4.5V 10V ±20V
    IRLZ24NSTRLPBF IRLZ24NSTRLPBF Infineon Technologies $0.00
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    		 12 Weeks Surface Mount Tape & Reel (TR) 1996 HEXFET® Active 1 (Unlimited) 2 SMD/SMT EAR99 10.668mm ROHS3 Compliant Contains Lead, Lead Free 17A No 3 LOGIC LEVEL COMPATIBLE, AVALANCHE RATED, HIGH RELIABILITY TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.699mm 9.65mm 60mOhm Surface Mount -55°C~175°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 1 DRAIN Single 45W 7.1 ns 60 ns 3.8W Ta 45W Tc 90 ns 18A SWITCHING 20 ns SILICON N-Channel 60m Ω @ 11A, 10V 2V @ 250μA 480pF @ 25V 15nC @ 5V 74ns 29 ns 16V 55V 55V 2 V 18A Tc 72A 68 mJ 4V 10V ±16V
    IRLMS5703TRPBF IRLMS5703TRPBF Infineon Technologies $0.00
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    		 download 7 Weeks Surface Mount Tape & Reel (TR) 1997 HEXFET® Not For New Designs 1 (Unlimited) 6 SMD/SMT EAR99 2.9972mm ROHS3 Compliant Lead Free -2.3A No 6 ULTRA LOW RESISTANCE SOT-23-6 No SVHC 1.4478mm 1.75mm 180mOhm Surface Mount -55°C~150°C TJ -30V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING 1 Single 1.7W 10 ns -1V 1.7W Ta -2.3A SWITCHING 20 ns SILICON P-Channel 180m Ω @ 1.6A, 10V 1V @ 250μA 170pF @ 25V 11nC @ 10V 12ns 8.4 ns 20V -30V -30V -1 V 2.4A 2.4A Ta 30V 4.5V 10V ±20V
    IPB090N06N3GATMA1 IPB090N06N3GATMA1 Infineon Technologies $0.00
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    		 download 13 Weeks Surface Mount Tape & Reel (TR) 2006 OptiMOS™ no Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant 3 AVALANCHE RATED TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 R-PSSO-G2 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 71W 15 ns 71W Tc 50A SWITCHING 0.009Ohm 60V 20 ns SILICON N-Channel 9m Ω @ 50A, 10V 4V @ 34μA 2900pF @ 30V 36nC @ 10V 40ns 5 ns 20V 50A Tc 60V 200A 10V ±20V
    IRLR7833TRPBF IRLR7833TRPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2004 HEXFET® Active 1 (Unlimited) 2 SMD/SMT EAR99 6.7056mm ROHS3 Compliant Contains Lead, Lead Free Tin 98A No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.3876mm 6.22mm 4.5MOhm Surface Mount -55°C~175°C TJ 30V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 TO-252AA DRAIN Single 140W 14 ns 2.3V 140W Tc 140A SWITCHING 23 ns SILICON N-Channel 4.5m Ω @ 15A, 10V 2.3V @ 250μA 4010pF @ 15V 50nC @ 4.5V 6.9ns 15 ns 20V 30V 30V 2.3 V 140A Tc 560A 4.5V 10V ±20V
    IRLZ44ZSTRLPBF IRLZ44ZSTRLPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2010 HEXFET® Active 1 (Unlimited) 2 EAR99 10.668mm ROHS3 Compliant Contains Lead, Lead Free 51A No 3 AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.826mm 9.65mm 13.5mOhm Surface Mount -55°C~175°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 80W 14 ns 3V 80W Tc 32 ns 51A SWITCHING 25 ns SILICON N-Channel 13.5m Ω @ 31A, 10V 3V @ 250μA 1620pF @ 25V 36nC @ 5V 160ns 42 ns 16V 55V 55V 3 V 51A Tc 204A 78 mJ 4.5V 10V ±16V
    BSC026NE2LS5ATMA1 BSC026NE2LS5ATMA1 Infineon Technologies $0.00
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    		 download 26 Weeks Surface Mount Tape & Reel (TR) 2013 OptiMOS™ yes Active 1 (Unlimited) 5 ROHS3 Compliant Contains Lead 8 8-PowerTDFN not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL FLAT NOT SPECIFIED NOT SPECIFIED R-PDSO-F5 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 25V 2.5W Ta 29W Tc 82A SWITCHING 0.004Ohm SILICON N-Channel 2.6m Ω @ 30A, 10V 2V @ 250μA 1100pF @ 12V 16nC @ 10V 24A 24A Ta 82A Tc 14 mJ 4.5V 10V ±16V
    IRLR2905TRPBF IRLR2905TRPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2000 HEXFET® Active 1 (Unlimited) 2 SMD/SMT EAR99 6.7056mm ROHS3 Compliant Contains Lead, Lead Free Tin 41A No 3 AVALANCHE RATED TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.52mm 6.22mm 27mOhm Surface Mount -55°C~175°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 R-PSSO-G2 1 FET General Purpose Power 1 TO-252AA DRAIN Single 69W 11 ns 2V 110W Tc 120 ns 42A 175°C SWITCHING 26 ns SILICON N-Channel 27m Ω @ 25A, 10V 2V @ 250μA 1700pF @ 25V 48nC @ 5V 84ns 15 ns 16V 55V 55V 2 V 20A 42A Tc 4V 10V ±16V
    IRFR24N15DTRPBF IRFR24N15DTRPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2010 HEXFET® Active 1 (Unlimited) 2 EAR99 6.7056mm ROHS3 Compliant Lead Free 24A No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.26mm 2.39mm 95Ohm Surface Mount -55°C~175°C TJ 150V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 TO-252AA DRAIN Single 140W 11 ns 5V 140W Tc 24A SWITCHING 19 ns SILICON N-Channel 95m Ω @ 14A, 10V 5V @ 250μA 890pF @ 25V 45nC @ 10V 53ns 15 ns 30V 150V 150V 5 V 24A Tc 96A 10V ±30V
    IRFR2407TRPBF IRFR2407TRPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2000 HEXFET® Active 1 (Unlimited) 2 SMD/SMT EAR99 6.7056mm ROHS3 Compliant Lead Free 42A No 3 AVALANCHE RATED, HIGH RELIABILITY TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.3876mm 6.22mm 26mOhm Surface Mount -55°C~175°C TJ 75V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 TO-252AA DRAIN Single 110W 16 ns 4V 110W Tc 150 ns 42A SWITCHING 65 ns SILICON N-Channel 26m Ω @ 25A, 10V 4V @ 250μA 2400pF @ 25V 110nC @ 10V 90ns 66 ns 20V 75V 75V 4 V 42A Tc 10V ±20V
    IRFR3708TRPBF IRFR3708TRPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2004 HEXFET® Not For New Designs 1 (Unlimited) 2 EAR99 6.7056mm ROHS3 Compliant Contains Lead, Lead Free 61A No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.52mm 6.22mm 12.5mOhm Surface Mount -55°C~175°C TJ 30V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 1 FET General Purpose Power 1 TO-252AA DRAIN Single 87W 7.2 ns 2V 87W Tc 61A 175°C SWITCHING 17.6 ns SILICON N-Channel 12.5m Ω @ 15A, 10V 2V @ 250μA 2417pF @ 15V 24nC @ 4.5V 50ns 3.7 ns 12V 30V 30V 2 V 61A Tc 244A 2.8V 10V ±12V
    IRF7473TRPBF IRF7473TRPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2004 HEXFET® Active 1 (Unlimited) 8 SMD/SMT EAR99 4.9784mm ROHS3 Compliant Contains Lead, Lead Free 6.9A No 8 ULTRA LOW RESISTANCE 8-SOIC (0.154, 3.90mm Width) No SVHC 1.4986mm 3.9878mm Surface Mount -55°C~150°C TJ 100V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING 260 30 1 6.3 mm Single 2.5W 24 ns 5.5V 2.5W Ta 6.9A SWITCHING 0.026Ohm 29 ns SILICON N-Channel 26m Ω @ 4.1A, 10V 5.5V @ 250μA 3180pF @ 25V 61nC @ 10V 20ns 11 ns 20V 100V 100V 5.5 V 6.9A Ta 55A 10V ±20V
    IRF9310TRPBF IRF9310TRPBF Infineon Technologies $0.00
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    Min: 1

    Mult: 1

    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2008 HEXFET® Active 1 (Unlimited) 8 EAR99 4.9784mm ROHS3 Compliant Lead Free Tin No 8 8-SOIC (0.154, 3.90mm Width) No SVHC 1.4986mm 3.9878mm 4.6MOhm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 DUAL GULL WING R-PDSO-G3 Other Transistors 1 DRAIN Single 2.5W 25 ns -1.8V 2.5W Ta -20A SWITCHING 65 ns SILICON P-Channel 4.6m Ω @ 20A, 10V 2.4V @ 100μA 5250pF @ 15V 165nC @ 10V 47ns 70 ns 20V -30V -1.8 V 20A Tc 30V 630 mJ 4.5V 10V ±20V