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    Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Mounting Type Weight Operating Temperature Technology Operating Mode JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Max Power Dissipation Reference Standard Number of Elements Configuration JEDEC-95 Code Case Connection Halogen Free Polarity/Channel Type Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Power Dissipation-Max Continuous Drain Current (ID) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min FET Technology Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Drive Voltage (Max Rds On,Min Rds On) Vgs (Max)
    IRF7204TR IRF7204TR Infineon Technologies $0.00
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    		 download Cut Tape (CT) 1997 HEXFET® Obsolete 1 (Unlimited) 8 EAR99 Non-RoHS Compliant LOGIC LEVEL COMPATIBLE 8-SOIC (0.154, 3.90mm Width) Surface Mount MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PDSO-G8 Not Qualified 1 SINGLE WITH BUILT-IN DIODE SWITCHING 0.06Ohm 20V SILICON P-Channel 60m Ω @ 5.3A, 10V 2.5V @ 250μA 860pF @ 10V 25nC @ 10V 5.3A 5.3A Ta 20V
    IRLL2705TR IRLL2705TR Infineon Technologies $0.00
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    		 download Cut Tape (CT) 1999 HEXFET® Obsolete 1 (Unlimited) 4 EAR99 Non-RoHS Compliant LOGIC LEVEL COMPATIBLE TO-261-4, TO-261AA Surface Mount MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING 260 30 YES R-PDSO-G4 Not Qualified 1 SINGLE DRAIN 0.051Ohm 55V SILICON N-Channel 40m Ω @ 3.8A, 10V 2V @ 250μA 870pF @ 25V 48nC @ 10V 5.2A 3.8A Ta 55V 30A 110 mJ
    IRLL3303TR IRLL3303TR Infineon Technologies $0.00
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    		 Tape & Reel (TR) 1999 HEXFET® Obsolete 1 (Unlimited) 4 EAR99 Non-RoHS Compliant LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY TO-261-4, TO-261AA not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier DUAL GULL WING 260 30 YES R-PDSO-G4 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 1W Ta SWITCHING 0.031Ohm 30V SILICON N-Channel 31m Ω @ 4.6A, 10V 1V @ 250μA 840pF @ 25V 50nC @ 10V 4.6A 4.6A Ta 30V 37A 140 mJ 4.5V 10V ±16V
    IRL3803S IRL3803S Infineon Technologies $0.00
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    		 Tube 2002 HEXFET® Obsolete 1 (Unlimited) 2 Non-RoHS Compliant AVALANCHE RATED, LOGIC LEVEL COMPATIBLE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE DRAIN 3.8W Ta 200W Tc SWITCHING 0.006Ohm 30V SILICON N-Channel 6m Ω @ 71A, 10V 1V @ 250μA 5000pF @ 25V 140nC @ 4.5V 140A 140A Tc 30V 470A 610 mJ 4.5V 10V ±16V
    IRF7455 IRF7455 Infineon Technologies $0.00
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    		 download Tube 2004 HEXFET® Obsolete 1 (Unlimited) 8 EAR99 Non-RoHS Compliant AVALANCHE RATED 8-SOIC (0.154, 3.90mm Width) Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING 260 NOT SPECIFIED YES R-PDSO-G8 Not Qualified 1 SINGLE WITH BUILT-IN DIODE MS-012AA 2.5W Ta SWITCHING 0.0075Ohm 30V SILICON N-Channel 7.5m Ω @ 15A, 10V 2V @ 250μA 3480pF @ 25V 56nC @ 5V 15A 15A Ta 30V 120A 200 mJ 2.8V 10V ±12V
    IRLR8729TRLPBF IRLR8729TRLPBF Infineon Technologies $0.00
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    		 download 52 Weeks Surface Mount Tape & Reel (TR) 2004 HEXFET® Not For New Designs 1 (Unlimited) 2 EAR99 6.7056mm ROHS3 Compliant 3 TO-252-3, DPak (2 Leads + Tab), SC-63 2.26mm 6.22mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 Not Qualified 1 TO-252AA DRAIN Single 55W 10 ns 55W Tc 58A SWITCHING 0.0089Ohm 11 ns SILICON N-Channel 8.9m Ω @ 25A, 10V 2.35V @ 25μA 1350pF @ 15V 16nC @ 4.5V 47ns 10 ns 20V 30V 50A 58A Tc 260A 74 mJ 4.5V 10V ±20V
    AUIRF540Z AUIRF540Z Infineon Technologies $0.00
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    		 download 16 Weeks Through Hole Tube 2000 HEXFET® Active 1 (Unlimited) 3 EAR99 10.66mm ROHS3 Compliant No 3 AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY TO-220-3 No SVHC 16.51mm 4.82mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB Single 92W 15 ns 2V 92W Tc 36A SWITCHING 0.0265Ohm 43 ns SILICON N-Channel 26.5m Ω @ 22A, 10V 4V @ 250μA 1770pF @ 25V 63nC @ 10V 51ns 39 ns 20V 100V 2 V 36A Tc 10V ±20V
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    		 download 26 Weeks Surface Mount, Through Hole Tube 2013 HEXFET® Active 1 (Unlimited) EAR99 6.73mm ROHS3 Compliant Lead Free No 3 TO-251-3 Short Leads, IPak, TO-251AA No SVHC 6.22mm 2.39mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) 1 FET General Purpose Power Single 163W 12 ns 3V 163W Tc 100A 51 ns N-Channel 1.98m Ω @ 90A, 10V 3.9V @ 100μA 5171pF @ 25V 155nC @ 10V 80ns 51 ns 20V 40V 3 V 100A Tc 10V ±20V
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2012 HEXFET® Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Lead Free 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 140W 13 ns 2V 140W Tc 61A SWITCHING 28 ns SILICON N-Channel 13.9m Ω @ 37A, 10V 4V @ 100μA 3180pF @ 50V 87nC @ 10V 32ns 20V 100V 61A Tc 250A 10V ±20V
    IPI50R399CPXKSA2 IPI50R399CPXKSA2 Infineon Technologies $0.00
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    		 download 8 Weeks Through Hole Tube 2008 CoolMOS™ yes Not For New Designs 1 (Unlimited) 3 EAR99 10.2mm ROHS3 Compliant 3 TO-262-3 Long Leads, I2Pak, TO-262AA 9.45mm 4.5mm Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) NOT SPECIFIED NOT SPECIFIED 1 DRAIN Single 83W 35 ns 500V 83W Tc 9A SWITCHING 80 ns SILICON N-Channel 399m Ω @ 4.9A, 10V 3.5V @ 330μA 890pF @ 100V 23nC @ 10V 14ns 20V 560V 9A 9A Tc 20A 215 mJ 10V ±20V
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    		 download 2016 yes Obsolete 1 (Unlimited) 3 EAR99 ROHS3 Compliant not_compliant ENHANCEMENT MODE e3 Tin (Sn) SINGLE THROUGH-HOLE NOT SPECIFIED NOT SPECIFIED NO R-PSFM-T3 AEC-Q101 1 SINGLE WITH BUILT-IN DIODE TO-220AB N-CHANNEL 0.0209Ohm 120V METAL-OXIDE SEMICONDUCTOR SILICON 50A 200A 330 mJ
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    		 download 14 Weeks Surface Mount Tape & Reel (TR) 2008 OptiMOS™ Not For New Designs 1 (Unlimited) 2 EAR99 ROHS3 Compliant Contains Lead 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 AEC-Q101 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 35 ns -30V 137W Tc 80A 0.0047Ohm 70 ns SILICON P-Channel 4.7m Ω @ 80A, 10V 4V @ 253μA 10300pF @ 25V 130nC @ 10V 10ns 20 ns 20V 80A Tc 30V 410 mJ 10V ±20V
    IRFSL5615PBF IRFSL5615PBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2008 Active 1 (Unlimited) 3 EAR99 10.668mm ROHS3 Compliant Lead Free No 3 TO-262-3 Long Leads, I2Pak, TO-262AA 9.652mm 4.826mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE 260 40 1 SINGLE WITH BUILT-IN DIODE DRAIN 144W 8.9 ns 144W Tc 33A AMPLIFIER 0.042Ohm 17.2 ns SILICON N-Channel 42m Ω @ 21A, 10V 5V @ 100μA 1750pF @ 50V 40nC @ 10V 23.1ns 13.1 ns 20V 150V 33A Tc 140A 109 mJ 10V ±20V
    IPP50R399CPXKSA1 IPP50R399CPXKSA1 Infineon Technologies $0.00
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    		 download 8 Weeks Through Hole Tube 2008 CoolMOS™ yes Not For New Designs 1 (Unlimited) 3 10.36mm ROHS3 Compliant Lead Free 3 TO-220-3 No SVHC 15.95mm 4.57mm Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) NOT SPECIFIED NOT SPECIFIED 3 FET General Purpose Powers Not Qualified 1 TO-220AB ISOLATED Halogen Free Single 83W 35 ns 3V 500V 83W Tc 9A SWITCHING 80 ns SILICON N-Channel 399m Ω @ 4.9A, 10V 3.5V @ 330μA 890pF @ 100V 4nC @ 10V 14ns 14 ns 20V 500V 9A 9A Ta 20A 215 mJ 10V ±20V
    AUIRFR5305TR AUIRFR5305TR Infineon Technologies $0.00
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    		 download 16 Weeks Surface Mount Tape & Reel (TR) 2010 HEXFET® Active 1 (Unlimited) 2 EAR99 175°C -55°C ROHS3 Compliant Lead Free Tin No 3 AVALANCHE RATED, HIGH RELIABILITY TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 R-PSSO-G2 Other Transistors 110W 1 TO-252AA DRAIN Single 110W 14 ns 31A SWITCHING 0.065Ohm 39 ns P-Channel 65m Ω @ 16A, 10V 4V @ 250μA 1200pF @ 25V 63nC @ 10V 66ns 63 ns 20V 55V 31A Tc 280 mJ
    IPB80N06S2L09ATMA2 IPB80N06S2L09ATMA2 Infineon Technologies $0.00
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    		 download 10 Weeks Surface Mount Tape & Reel (TR) 2006 OptiMOS™ yes Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant No 3 LOGIC LEVEL COMPATIBLE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE DRAIN 10 ns 55V 190W Tc 80A 0.011Ohm 53 ns SILICON N-Channel 8.2m Ω @ 52A, 10V 2V @ 125μA 2620pF @ 25V 105nC @ 10V 19ns 18 ns 20V 80A Tc 4.5V 10V ±20V
    IRL3803STRRPBF IRL3803STRRPBF Infineon Technologies $0.00
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    		 download 16 Weeks Tape & Reel (TR) 2002 HEXFET® Not For New Designs 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, LOGIC LEVEL COMPATIBLE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 3.8W Ta 200W Tc SWITCHING 0.006Ohm 30V SILICON N-Channel 6m Ω @ 71A, 10V 1V @ 250μA 5000pF @ 25V 140nC @ 4.5V 140A 140A Tc 30V 470A 610 mJ 4.5V 10V ±16V
    IRFS52N15DTRRP IRFS52N15DTRRP Infineon Technologies $0.00
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    		 download 10 Weeks Surface Mount Tape & Reel (TR) 2010 HEXFET® Not For New Designs 1 (Unlimited) EAR99 10.668mm ROHS3 Compliant No 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB 4.826mm 9.65mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 1 Single 3.8W 16 ns 3.8W Ta 230W Tc 51A 28 ns N-Channel 32m Ω @ 36A, 10V 5V @ 250μA 2770pF @ 25V 89nC @ 10V 47ns 25 ns 30V 150V 51A Tc 10V ±30V
    IPB80P04P4L04ATMA1 IPB80P04P4L04ATMA1 Infineon Technologies $0.00
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    		 download 14 Weeks Surface Mount Tape & Reel (TR) 2011 Automotive, AEC-Q101, OptiMOS™ Not For New Designs 1 (Unlimited) 2 EAR99 10mm ROHS3 Compliant Contains Lead No 3 LOGIC LEVEL COMPATIBLE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB 4.4mm 9.25mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) GULL WING R-PSSO-G2 1 DRAIN Halogen Free Single 125W 28 ns -40V 125W Tc -80A 0.0071Ohm 119 ns SILICON P-Channel 4.4m Ω @ 80A, 10V 2.2V @ 250μA 3800pF @ 25V 176nC @ 10V 13ns 65 ns 16V -40V 80A Tc 40V 60 mJ 4.5V 10V ±16V
    IRF3007STRLPBF IRF3007STRLPBF Infineon Technologies $0.00
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    		 12 Weeks Surface Mount Tape & Reel (TR) 2004 HEXFET® Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Lead Free AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 R-PSSO-G2 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 120W Tc 62A SWITCHING 0.0126Ohm 75V SILICON N-Channel 12.6m Ω @ 48A, 10V 4V @ 250μA 3270pF @ 25V 130nC @ 10V 62A Tc 75V 320A 946 mJ 10V ±20V
    AUIRFZ24NSTRL AUIRFZ24NSTRL Infineon Technologies $0.00
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    		 download 16 Weeks Tape & Reel (TR) 2015 HEXFET® Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier DUAL GULL WING 260 30 YES R-PDSO-G2 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE TO-263AB DRAIN 3.8W Ta 45W Tc SWITCHING 0.07Ohm 55V SILICON N-Channel 70m Ω @ 10A, 10V 4V @ 250μA 370pF @ 25V 20nC @ 10V 17A 17A Tc 55V 68A 71 mJ 10V ±20V
    IPB049N08N5ATMA1 IPB049N08N5ATMA1 Infineon Technologies $0.00
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    		 download 13 Weeks Surface Mount Tape & Reel (TR) 2013 OptiMOS™ yes Active 1 (Unlimited) 2 ROHS3 Compliant Contains Lead TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant Surface Mount 3.949996g -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 1 1 DRAIN Halogen Free Single 17 ns 80V 125W Tc 80A SWITCHING 0.0049Ohm 27 ns SILICON N-Channel 4.9m Ω @ 80A, 10V 3.8V @ 66μA 3770pF @ 40V 53nC @ 10V 7ns 7 ns 20V 80A Tc 320A 84 mJ 6V 10V ±20V
    IPB80N06S209ATMA2 IPB80N06S209ATMA2 Infineon Technologies $0.00
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    		 download 10 Weeks Tape & Reel (TR) 2006 OptiMOS™ yes Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE DRAIN 190W Tc 0.0088Ohm 55V SILICON N-Channel 8.8m Ω @ 50A, 10V 4V @ 125μA 2360pF @ 25V 80nC @ 10V 80A 80A Tc 55V 320A 370 mJ 10V ±20V
    AUIRL7736M2TR AUIRL7736M2TR Infineon Technologies $0.00
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    		 download 16 Weeks Surface Mount Tape & Reel (TR) 2011 HEXFET® Active 1 (Unlimited) 5 ROHS3 Compliant No 9 HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE DirectFET™ Isometric M4 No SVHC Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE BOTTOM R-XBCC-N5 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 63W 48 ns 1.8V 2.5W Ta 63W Tc 179A SWITCHING 0.003Ohm 56 ns SILICON N-Channel 3m Ω @ 67A, 10V 2.5V @ 150μA 5055pF @ 25V 78nC @ 4.5V 210ns 76 ns 16V 40V 22A 179A Tc 450A 4.5V 10V ±16V
    IRLR3410PBF IRLR3410PBF Infineon Technologies $0.00
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    		 download Tube 1998 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, ULTRA LOW RESISTANCE TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 79W Tc SWITCHING 0.125Ohm 100V SILICON N-Channel 105m Ω @ 10A, 10V 2V @ 250μA 800pF @ 25V 34nC @ 5V 17A 17A Tc 100V 60A 150 mJ 4V 10V ±16V
    AUIRF4104 AUIRF4104 Infineon Technologies $0.00
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    		 download 16 Weeks Through Hole Tube 2010 HEXFET® Active 1 (Unlimited) 3 EAR99 10.6426mm ROHS3 Compliant No 3 TO-220-3 No SVHC 9.017mm 4.82mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB Single 140W 16 ns 2V 140W Tc 75A SWITCHING 0.0055Ohm 38 ns SILICON N-Channel 5.5m Ω @ 75A, 10V 4V @ 250μA 3000pF @ 25V 100nC @ 10V 130ns 77 ns 20V 40V 75A Tc 470A 220 mJ 10V ±20V
    IPB120N10S405ATMA1 IPB120N10S405ATMA1 Infineon Technologies $0.00
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    		 download 14 Weeks Surface Mount Tape & Reel (TR) 2013 Automotive, AEC-Q101, OptiMOS™ yes Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Contains Lead 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 15 ns 100V 190W Tc 120A 0.005Ohm 30 ns SILICON N-Channel 5m Ω @ 100A, 10V 3.5V @ 120μA 6540pF @ 25V 91nC @ 10V 10ns 35 ns 20V 120A Tc 480A 10V ±20V
    IPB90N06S4L04ATMA2 IPB90N06S4L04ATMA2 Infineon Technologies $0.00
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    		 download 16 Weeks Surface Mount Tape & Reel (TR) 2009 Automotive, AEC-Q101, OptiMOS™ yes Active 1 (Unlimited) 2 EAR99 10mm ROHS3 Compliant Lead Free 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant 4.4mm 9.25mm Surface Mount 1.946308g -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 1 1 DRAIN Single 21 ns 60V 150W Tc 90A 140 ns SILICON N-Channel 3.7m Ω @ 90A, 10V 2.2V @ 90μA 13000pF @ 25V 170nC @ 10V 6ns 20 ns 16V 90A Tc 4.5V 10V ±16V
    IPA040N06NXKSA1 IPA040N06NXKSA1 Infineon Technologies $0.00
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    		 download 13 Weeks Through Hole Tube 2012 OptiMOS™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free 3 TO-220-3 Full Pack Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 1 SINGLE WITH BUILT-IN DIODE TO-220AB ISOLATED Halogen Free 14 ns 60V 36W Tc 69A SWITCHING 0.004Ohm 33 ns SILICON N-Channel 4m Ω @ 69A, 10V 3.3V @ 50μA 3375pF @ 30V 44nC @ 10V 16ns 8 ns 20V 69A Tc 276A 77 mJ 6V 10V ±20V
    AUIRFZ44VZSTRL AUIRFZ44VZSTRL Infineon Technologies $0.00
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    		 download 16 Weeks Surface Mount Tape & Reel (TR) 2013 HEXFET® Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant 3 ULTRA LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 AEC-Q101 1 SINGLE WITH BUILT-IN DIODE DRAIN 92W 14 ns 92W Tc 57A SWITCHING 0.012Ohm 35 ns SILICON N-Channel 12m Ω @ 34A, 10V 4V @ 250μA 1690pF @ 25V 65nC @ 10V 62ns 38 ns 20V 60V 57A Tc 10V ±20V